نتایج جستجو برای: buffer layer

تعداد نتایج: 321916  

Journal: :journal of biomedical physics and engineering 0
h. nadgaran department of physics, college of science, shiraz university, shiraz 71454, iran r. pourmand department of physics, college of science, shiraz university, shiraz 71454, iran

background: whispering gallery modes (wgm) biosensors are ultrasensitive systems that can measure amount of adsorbed layer onto the micro-cavity surface. they have many applications including protein, peptide growth, dna and bacteria detection, molecular properties measurements and specific interaction and drug table recognitions due to their high sensitivity, compact size and label free sensin...

2007
D. S. Katzer W. S. Rabinovich G. C. Gilbreath

In this work we compare the effect of the buffer layer on the device quality and surface morphology of strained InGaAs/AlGaAs PIN multiple quantum well ~MQW! modulators. We examine GaAs buffer layers and linearly graded InGaAs buffer layers. Our results indicate that for lower indium concentrations in the quantum wells ~less than about 23%! better device performance and surface morphology are o...

2011
Geoffrey S. D. Beach Satoru Emori

Ta oxide (TaOx) is investigated as a resistive buffer layer for the growth of high-quality Co/Pt multilayers with perpendicular magnetic anisotropy (PMA). The Pt/(Co/Pt)3 films grown on TaOx buffer layers exhibit stronger PMA than those grown on Pt buffer layers, and are of comparable quality to films grown on metallic Ta. The optimized multilayers with TaOx buffer layers remain out-of-plane ma...

Journal: :Nanotechnology 2015
Ravi K Biroju Nikhil Tilak Gone Rajender S Dhara P K Giri

We demonstrate the graphene assisted catalyst free growth of ZnO nanowires (NWs) on chemical vapor deposited (CVD) and chemically processed graphene buffer layers at a relatively low growth temperature (580 °C) in the presence and absence of ZnO seed layers. In the case of CVD graphene covered with rapid thermal annealed ZnO buffer layer, the growth of vertically aligned ZnO NWs takes place, wh...

2008
Nadia Qasim Fatin Said Hamid Aghvami

This paper evaluates quality of services for the mobile ad hoc network’s routing protocols. It is seen that mobile ad hoc networks will be an integral part of next generation networks because of its flexibility, infrastructure less nature, ease of maintenance, auto configuration, self administration capabilities, and cost effectiveness. This research paper shows comparative evaluation within mo...

2014
Jin Young Kim Kai Zhu Nathan R Neale Arthur J Frank

Two-step anodization of transparent TiO2 nanotube arrays has been demonstrated with aid of a Nb-doped TiO2 buffer layer deposited between the Ti layer and TCO substrate. Enhanced physical adhesion and electrochemical stability provided by the buffer layer has been found to be important for successful implementation of the two-step anodization process. With the proposed approach, the morphology ...

2016
Wenliang Wang Haiyan Wang Weijia Yang Yunnong Zhu Guoqiang Li

High-quality GaN epitaxial films have been grown on Si substrates with Al buffer layer by the combination of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) technologies. MBE is used to grow Al buffer layer at first, and then PLD is deployed to grow GaN epitaxial films on the Al buffer layer. The surface morphology, crystalline quality, and interfacial property of as-grown GaN ep...

2011
Ning Qin Yibin Wang Greg Carnie Shahrokh Shahpar

Based on the buffer layer method, a new method called zipper layer method was developed. This method maintains the capability of the buffer layer which can link two topologically different multi-block structured meshes together, while significantly improving the robustness. This method can both locally and globally connect two dissimilar structured meshes with tetrahedrons and pyramids to form ...

2002
J. Flokstra H. Rogalla A. van Silfhout

Interdiffusion studies on high-T, superconducting YBasCu,O,_s thin films with thicknes~s in the range of 2000-3000 A, on a Si(ll1) substrate with a buffer layer have been performed. The buffer layer consists of a 400 A thick epitaxial Nisi, layer, covered with 1200 A of polycrystalline 210,. YBa,Cu,O,_s films were prepared using laser ablation. The YBa,Cu,O,_, films on the Si/NiSi,/ZrOs substra...

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