The cable capacitance in cryogenic and high vacuum applications of quartz tuning forks imposes severe constraints on the bandwidth and noise performance of the measurement. We present a single stage low noise transimpedance amplifier with a bandwidth exceeding 1 MHz and provide an in-depth analysis of the dependence of the amplifier parameters on the cable capacitance.

In the measurement of mutual capacitance between electrodes both the coupling and the leakage effect contribute to the measurement result whereas the leakage mode is dominant in the selfcapacitance mode. While the coupling effect is mainly defined by the geometry and material distribution close to the electrodes, the root cause or modulation of the leakage effect may be far away from the electr...

Direct in situ measurement of specific capacitance, monolayer tension, and bilayer tension in a droplet interface bilayer

Increases in the gate capacitance of field-effect transistor structures allow the production of lower-power devices that are compatible with higher clock rates, driving the race for developing high-κ dielectrics. However, many-body effects in an electronic system can also enhance capacitance. Onto the electron system that forms at the LaAlO(3)/SrTiO(3) interface, we fabricated top-gate electrod...

Part 1 of this two-part paper describes the analysis and 2D finite element (FE) simulations for a capacitive incremental position sensor for nanopositioning of microactuator systems with a displacement range of 100 μm or more. Two related concepts for a capacitive incremental position sensor are presented. In an incremental capacitance measurement mode (ICMM), the periodic change in capacitance...

A practical approach to determining the distributed capacitance and inductance of individual metamaterial resonators is demonstrated. By loading a set of lumped capacitors onto the resonator, the resonance frequency can be measured as a function of the load capacitance. The capacitance and inductance values of the resonator are then determined by relating the equivalent circuit model to the mea...

Scanning microwave microscopy (SMM) is a recent development in SPM technique that combines thelateral resolution of AFM and the measurement precision of microwave analysis. It consists of an AFMinterfaced with a vector network analyzer (VAN). In the reflection mode (S11 measurement), themeasured complex reflection coefficient of the microwave from the contact point directly corr...

The demand for computer simulation of multiconductor interconnections in VLSI structures necessitates that such structures should be modelled. Calculations of the model capacitance matrix from measurements, for the multiconductor transmission lines which are coupled interconnections in a VLSI structures, using the "two-terminal" capacitances indirect measurement procedure is strongly corrupted ...