We present a theoretical study of the spin-dependent electron scattering from screened impurities in III–V semiconductor quantum wells. The effective one band Hamiltonian and the Rashba spin-orbit interaction are used. We calculated the Mott scattering cross-section and the Sherman function for two-dimensional electrons spin-polarized parallel to the z-axis (direction of structure growth). We h...

The defect structure of CdTe substrates has often been investigated with luminescence techniques. In particular, a luminescence band normally referred as the 1.40 eV band, has been associated with recombination processes involving defects but its nature seems to be complex. Myers et al.’ in their photoluminescence study of CdTe wafers concluded that a significant part of the 1.40 eV band is dir...

In this paper, we have focused on the formation and the role of CdS/CdTe interface on CdTe solar cells. The devices were made using chemical bath deposited (CBD) CdS on SnO2/glass substrates and the CdTe was deposited by close spaced sublimation (CSS). CdTe was treated with CdCl2 : known to be a key processing parameter. Compositional analysis showed considerable interdiffusion of Te and S as w...

We have observed an epilayer-thickness-dependent polarity inversion for the growth of CdTe on Sb(Bi)/CdTe(111)B. For films with Sb(Bi) thicknesses of less than 40 A (15 A), the CdTe layer shows a B (Te-terminated) face, but it switches to an A (Cd-terminated) face for thicker layers. On the other hand, a CdTe layer grown on Bi(Sb)/CdTe(111)A always shows the A face regardless of Sb or Bi layer ...

The effects of rapid thermal annealing (RTA) on CdTe/Si (100) heterostructures have been studied in order to improve the structural quality of CdTe epilayers. Samples of CdTe (111) polycrystalline thin films grown by vapor phase epitaxy (VPE) on Si (100) substrates have been investigated. The strained structures were rapidly thermally annealed at 400°C, 450°C, 500°C, 550°C, and 600°C for 10 sec...

We use the combination of high-resolution electron microscopy and density-functional theory to study the atomic structure and electronic effects of grain boundaries in polycrystalline photovoltaic materials such as Si, CdTe, CuInSe2, and CuGaSe2. We find that grain boundaries containing dislocation cores create deep levels in Si, CdTe, and CuGaSe2. Surprisingly, however, they do not create deep...

Polycrystalline thin-film CdTe is one of the leading materials used in photovoltaic solar cells. One way to improve device performance and stability is through understanding how various process steps alter defect states in the CdTe layer. Low-temperature photoluminescence (PL) studies show a 1.456-eV PL peak in single-crystal CdTe that is likely due to a Cui-OTe defect complex. A similar peak, ...

The electronic and photoconductive characteristics of CdTe nanowire-based field effect transistors were studied systematically. The electrical characterization of a single CdTe nanowire FET verifies p-type behavior. The CdTe NW FETs respond to visible-near infrared (400-800 nm) incident light with a fast, reversible and stable response characterized by a high responsivity (81 A W(-1)), photocon...

Close-spaced-sublimated (CSS) CdS films exhibit strong fundamental edge luminescence, high optical absorption, and a bandgap of ~2.41 eV. Structurally, these films show good crystallinity with thickness-dependent grain sizes that vary between 100-400 nm. In contrast, chemical-bath-deposited (CBD) CdS exhibits subband luminescence, lower absorption, and a thicknessdependent bandgap. These films ...

In the past 18 months, thin-film solar cell technologies based on CdTe and CIS have made significant technical progress. Most of the improvements have occurred at the level of solar cells, modules, systems, and reliability testing in both CdTe and CIS. Total-area efficiencies of 14.7% for a thin-film CdTe solar cell deposited on a low-cost, sodalime glass fabricated by Golden Photon, Inc; was v...