نتایج جستجو برای: channel thickness
تعداد نتایج: 330602 فیلتر نتایج به سال:
We report on the fabrication of coplanar dual-gate ZnO thin-film transistors with 200-nm thickness SiNx for both top and bottom dielectrics. The ZnO film was deposited by RF magnetron sputtering on SiO2/Si substrates at 100◦C. And the thickness of ZnO film is compared with 100-nm and 40-nm. This TFT has a channel width of 100-μm and channel length of 5-μm. The fabricated coplanar dual-gate ZnO ...
AlN/GaN/sapphire heterostructures with AlN gate film thickness of 3–35 nm are characterized using photoreflectivity ~PR! and photoluminescence ~PL! spectroscopy. Under a critical AlN film thickness, the luminescence from the GaN channel layer near the interface proves to be excitonic. No luminescence related to the recombination of the two-dimensional electron gas ~2DEG! is observed, in spite o...
In this paper, the reconstruction mechanism of the boundary layer in the channel is studied using the lattice Boltzmann method (LBM). By comparing the distribution of velocity in the channel, the conclusion that LBM has feasibility and superiority is obtained. Based on this, a physical model of square cylinders is set up to simulate the velocity distribution and the effect on the thickness of b...
Band-structure effects on channel carrier density in the ultrathin-body end of the ITRS roadmap silicon (100) n-type metal oxide semiconductor field effect transistors (MOSFETs) are assessed here using a semi-empirical nearest-neighbor sp 3 d 5 s à tight-binding model with spin-orbit interaction. The calculations focus on the body thickness range between 10 and 18 atomic layers ($1:5{2:5 nm). A...
We have developed a scalable gate-last process to fabricate planar self-aligned InGaAs Quantum-well (QW) MOSFETs that relies on extensive use of dry recess. The fabrication sequence yields precise control of all critical transistor dimensions, in particular, the length and thickness of the channel and the access regions. The process involves a combination of anisotropic and isotropic F-based dr...
This paper discusses the process technology to fabricate multilayer-Polydimethylsiloxane (PDMS) based microfluidic device for bio-particles concentration detection in Lab-on-chip system. The micro chamber and the fluidic channel were fabricated using standard photolithography and soft lithography process. Conventional method by pouring PDMS on a silicon wafer and peeling after curing in soft li...
Advances in micro robots in non-invasive medicine have enabled physicians to perform diagnostic and therapeutic procedures with higher resolution and lower risk than before. However, navigation and precise localisation of such micro robots inside human body still remains a challenge. This is mostly due to the 1) lack of precise communication channel models, 2) inhomogeneity of the propagation m...
[1] When not laterally confined in valleys, pyroclastic flows create their own channel along the slope by selecting a given flowing width. Furthermore, the lobe-shaped deposits display a very specific morphology with high parallel lateral levees. A numerical model based on Saint Venant equations and the empirical variable friction coefficient proposed by Pouliquen and Forterre (2002) is used to...
A new type of laser photodetachment (LPD) technique has been developed for the measurement of electron sheath thickness around an electrostatic probe and for the measurement of the length of collection region of photodetached electrons (PDE). When a thickness of the sheath formed around an electrostatic probe is thicker than about 0.1 mm, modification of the temporal evolution of the LPD signal...
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