نتایج جستجو برای: charge compensation
تعداد نتایج: 183586 فیلتر نتایج به سال:
This paper presents a new technique for implementing a low-power CMOS imager with simultaneous on-chip computation of the difference and sum of two successive frames. Existing difference imagers are susceptible to errors due to collection (by the sense element and in-pixel storage node) of photo-generated charge that diffuses from the photo-active pixel area during integration of the second fra...
Recently, it was proposed to use negatively charged electron beams for compensation of beambeam effects due to protons in the Tevatron collider [1]. We show that a similar compensation is possible in space-charge dominated low energy proton beams. The idea has a potential of severalfold increase of the FNAL Booster beam brightness. Best results will be obtained using three electron lenses aroun...
In its application as a cathode material for Li-ion batteries, LiFePO4 shows good thermal stability, high theoretical energy density and low production costs. However, wider application of this material is still limited by poor transport of the charge carriers and poor Li ion transport within the LiFePO4 lattice [1]. This has lead to concerted research efforts how the electronic structure of Li...
In high charge RF photoinjectors for wakefield two beam acceleration studies, due to the strong longitudinal space charge, bunch lengthening between the photocathode and photoinjector exit is a critical issue. We present beam dynamics studies of bunch lengthening in an RF photoinjector for a high charge electron beam and describe methods to compensate the bunch lengthening to various degrees. I...
this study has been done with the aim of determining the effect of financial and nonfinancial compensation satisfaction on employee engagement considering mediator role of perceived organizational justice. the research statistical population included eight hundred sixty two isfahan municipality employees. three hundred fourtheen persons were selected as the research sample by stratified random ...
Secondary ions mass-spectrometry and spreading resistance profiles in the layers of a ferromagnetic Si implanted with Mn has been studied. Czochralski Si wafers both nand p-type, of highand low-resistivity, as well as a float zone Si were implanted with impurity fluencies of (1 5) x 10 16 cm -2 . The Mn impurity was found to compensate acceptors in a high-resistivity p-Si and donors in a low-re...
Electrical charging during SIMS-analysis (secondary ion mass spectrometry) is a severe limitation for the analysis of non-conductive samples. In most cases this charging can be compensated with the aid of an electron gun. This is an already established method to analyze insulating samples. In this work results of a systematic study of electron gun charge compensation in our CAMECA ims5f ion mic...
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