CMOS implementations for RF applications often employ technology modifications to reduce the silicon substrate loss at high frequencies. The most common techniques include the use of a high-resistivity substrate (ρ>10Ω-cm) or silicon-on-insulator (SOI) substrate and precise bondwire inductors [1, 2]. However, these techniques are incompatible with low-cost CMOS manufacture. This design demonstr...

A high accurate and low-voltage analog CMOS current divider which operates with a single power supply voltage is designed in 0.18µm CMOS standard technology. The proposed divider uses a differential amplifier and transistor in triode region in order to perform the division. The proposed divider is modeled with neural network while TLBO algorithm is used to optimize it. The proposed optimiza...

A high accurate and low-voltage analog CMOS current divider which operates with a single power supply voltage is designed in 0.18µm CMOS standard technology. The proposed divider uses a differential amplifier and transistor in triode region in order to perform the division. The proposed divider is modeled with neural network while TLBO algorithm is used to optimize it. The proposed optimiza...

In this paper we present an ultra low-voltage (ULV) floating-gate (FG) transconductance amplifier The amplifier can operate at supply voltages below 1V in a standard digital double poly CMOS process . The amplifier consists of a sinh shaped output current transconductance amplifier and a tanh shaped transconductance amplifier.

With the advancement of CMOS technology, the trend is to design transceivers using this technology with the aim of achieving full integration and reduced system cost. The power amplifier (PA) being one of the most important blocks of the wireless communication system is no exception. The aim of this work is to provide the study that allow the design of a singleended RF CMOS Class-E power amplif...

A method for reducing the two-tone third-order intermodulation products arising from two carrier frequencies at 1.95 and 2.00 GHz is demonstrated in a traveling wave tube-distributed amplifier. The optimum amplitude and phase of an injected second harmonic and the resulting intermodulation suppression of up to 24.2 dB are examined for fundamental drive levels approaching saturation.

Sense amplifiers are one of the very important peripheral components of CMOS memories. In a Hybrid Sense amplifier both current and voltage sensing techniques are used which makes it a better selection than a conventional current or voltage sense amplifiers. The hybrid sense amplifier works in three phases-Offset cancellation (200ps), Access phase (500ps) and Evaluation phase. The offset cancel...

Current comparator is a fundamental component of current-mode analog integrated circuits. A novel high-performance continuous-time CMOS current comparator is proposed in this paper, which comprises one CMOS complementary amplifier, two resistive-load amplifiers and two CMOS inverters. A MOS resistor is used as the CMOS complementary amplifier’s negative feedback. Because the voltage swings of t...

An optical receiver using a CMOS-compatible avalanche photodetector (CMOS-APD) is demonstrated. The CMOS-APD is fabricated with 0.18 μm standard CMOS technology and the optical receiver is implemented by using the CMOS-APD and a transimpedance amplifier on a board. The optical receiver can detect 6.25-Gb/s data with the help of the series inductive peaking effect.

A novel active feedback frequency compensation scheme is presented in this work. Based on the proposed technique, an amplifier with two main poles in its frequency bandwidth can be easily compensated by introducing a pole-zero pair in a local feedback. The proposed method is mathematically analyzed and then based on the derived formulations, a design procedure is established. The capability of ...