We report a general method for reliably fabricating quasi-one-dimensional superconducting nanowire arrays, with good control over nanowire cross section and length, and with full compatibility with device processing methods. We investigate Nb nanowires with individual nanowire cross sectional areas that range from bulklike to 10 x 11 nm, and with lengths from 1 to 100 microm. Nanowire size effe...

Articles you may be interested in Electronic transport mechanisms in scaled gate-all-around silicon nanowire transistor arrays Appl. Enhancement of programming speed on gate-all-around poly-silicon nanowire nonvolatile memory using self-aligned NiSi Schottky barrier source/drain High-performance gate-all-around polycrystalline silicon nanowire with silicon nanocrystals nonvolatile memory Appl. ...

Thin metallic nanowires are highly promising candidates for plasmonic waveguides in photonic and electronic devices. We have observed that light from the end of a silver nanowire, following excitation of plasmons at the other end of the wire, is emitted in a cone of angles peaking at nominally 45-60 degrees from the nanowire axis, with virtually no light emitted along the direction of the nanow...

Direct tensile mechanical loading of an individual single-crystal BaTiO(3) nanowire was realized to reveal the direct piezoelectric effect in the nanowire. Periodic voltage generation from the nanowire was produced by a periodically varying tensile mechanical strain applied with a precision mechanical testing stage. The measured voltage generation from the nanowire was found to be directly prop...

PURPOSE Cone shape neck is regarded as non-instruction for use (IFU) in most commercial stent graft. However, in real practice, liberal application of endovascular aneurysm repair (EVAR) for outside of IFU happens. We investigate non-adherence to conical neck anatomy in terms of early aneurysmal exclusion results. MATERIALS AND METHODS From January 2010 to December 2013, 105 patients with abd...

Forming electrodes on opposite sides of an individual bismuth nanowire was attempted to prepare for Hall measurements. Although a 1-mm-long bismuth nanowire which is completely covered with a quartz template has been successfully fabricated to prevent oxidation, it is very difficult to attach Hall electrodes on the opposite sides of the nanowire due to the quartz covering. One side of the cylin...

Optical properties are numerically investigated for vertically aligned silicon nanowire arrays with three types of structural randomness, i.e., random position, diameter, and length. Nanowire arrays with random position show slight absorption enhancement, while those with random diameter or length show significant absorption enhancement, which is attributed to the stronger optical scattering in...

A computational model was developed to analyze electrical conductivity of random metal nanowire networks. It was demonstrated for the first time through use of this model that a performance gain in random metal nanowire networks can be achieved by slightly restricting nanowire orientation. It was furthermore shown that heavily ordered configurations do not outperform configurations with some de...

Placing nanowires at the predetermined locations on a substrate represents one of the significant hurdles to be tackled for realization of heterogeneous nanowire systems. Here, we demonstrate spatially-controlled assembly of a single nanowire at the photolithographically recessed region at the electrode gap with high integration yield (~90%). Two popular routes, such as protruding electrode tip...

The use of nanowires and nanowire structures as photodetectors is an emerging research topic. Despite the large amount of reports on nanowire photoresponse that appeared in the literature over the last decade, the mechanism leading to high photosensitivity and photoconductive gain in high aspect ratio nanostructures has been elucidated only recently. Novel device architectures integrated in sin...