Over the past few years, the detection of single N-V centers in diamond has attracted much interest, since it is expected to lead to innovative applications in various domains of quantum information. The N-V center in diamond is a defect consisting of a substitutional nitrogen atom adjacent to a carbon-atom vacancy. The optical transition between the A ground state and the E excited state has a...

The origin of photoluminescence in copper indium sulfide (CIS) quantum dots (Qdots) has previously been ascribed to a donor– acceptor pair (DAP) recombination, with a crystal lattice defect implicated as the origin of the donor state. In this study, electron energy-loss spectroscopy (EELS) was used to observe defect-rich compositional domains within individual CIS Qdots, supporting a model of d...

Recently, correlated drain and gate current fluctuations have been observed in nano-scaled MOSFETs, indicating that their occurrence is linked to the same defect. One explanation for this observation can be given by the multi-state defect model, which has been developed to describe the hole capture and emission processes involved in the bias temperature instability (BTI). This model relies on a...

The origin of photoluminescence in copper indium sulfide (CIS) quantum dots (Qdots) has previously been ascribed to a donor-acceptor pair (DAP) recombination, with a crystal lattice defect implicated as the origin of the donor state. In this study, electron energy-loss spectroscopy (EELS) was used to observe defect-rich compositional domains within individual CIS Qdots, supporting a model of de...

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