Transistors based on MoS2 and other TMDs have been widely studied. The dangling-bond free surface of MoS2 has made the deposition of high-quality high-k dielectrics on MoS2 a challenge. The resulted transistors often suffer from the threshold voltage instability induced by the high density traps near MoS2/dielectric interface or inside the gate dielectric, which is detrimental for the practical...

Thin HfO2 films have been deposited on silicon via atomic layer deposition using anhydrous hafnium nitrate @Hf(NO3)4# . Properties of these films have been investigated using x-ray diffraction, x-ray reflectivity, spectroscopic ellipsometry, atomic force microscopy, x-ray photoelectron spectroscopy, and capacitance versus voltage measurements. Smooth and uniform initiation of film growth has be...

In this paper, we demonstrate high mobility solution-processed metal-oxide thin-film transistors (TFTs) by using a high-frequency-stable ionic-type hybrid gate dielectric (HGD). The HGD gate dielectric, a blend of sol-gel aluminum oxide (AlOx) and poly(4-vinylphenol) (PVP), exhibited high dielectric constant (ε~8.15) and high-frequency-stable characteristics (1 MHz). Using the ionic-type HGD as...

The Zenneck THz surface wave (Z-TSW) on metals is discussed with respect to its difficulty in generation and measurement. The spatial collapse of the extent of the Z-TSW evanescent field, upon the addition of a sub-wavelength dielectric layer on the metal surface, is explained by a simple model, in good agreement with exact analytical theory. Experimental measurements of the THz surface wave on...

X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy have been used to determine interfacial properties of HfO2 and HfAlO gate dielectrics grown on InP by atomic layer deposition. An undesirable interfacial InPxOy layer is easily formed at the HfO2/InP interface, which can severely degrade the electrical performance. However, an abrupt interface can be achieved ...

In this paper we report GaN:Eu AC-TDEL devices with high luminance and high efficiency levels obtained through optimized phosphor growth techniques and device structure. The GaN:Eu phosphor is grown using interrupted growth epitaxy (IGETM ). An improved thick dielectric layer for inorganic electroluminescent EL display devices has been achieved through a composite high-κ dielectric sol-gel/powd...

A novel, to our knowledge, device based on a tapered optical fiber with a double-layer deposition including a metallic media is presented, and its properties are studied. The main novelty of the device consists of the introduction of a dielectric layer, whereas the systems depicted in the literature are simply metal-coated tapered fibers. The presence of the dielectric layer permits one to tune...

We propose a novel surface-plasmon-resonance sensor design based on coating the holes of a three-hole microstructured optical fiber with a low-index dielectric layer on top of which a gold layer is deposited. The use of all three fiber holes and their relatively large size should facilitate the fabrication of the inclusions and the infiltration of the analyte. Our numerical results indicate tha...