Graphene exhibits unusual electronic properties, caused by a linear band structure near the Dirac point. This band structure is determined by the stacking sequence in graphene multilayers. Here we present a novel method of microscopically controlling the band structure. This is achieved by epitaxy of graphene on 3C-SiC(111) and 3C-SiC(100) thin films grown on a 3D microfabricated Si(100) substr...

We have developed a new depth-graded multilayer system comprising W and SiC layers, suitable for use as hard x-ray reflective coatings operating in the energy range 100-200 keV. Grazing-incidence x-ray reflectance at E = 8 keV was used to characterize the interface widths, as well as the temporal and thermal stability in both periodic and depth-graded W/SiC structures, whereas synchrotron radia...

The (001) surfaces of cubic SiC were investigated with ab-initio molecular dynamics simulations. We show that C-terminated surfaces can have different c(2×2) and p(2×1) reconstructions, depending on preparation conditions and thermal treatment, and we suggest experimental probes to identify the various reconstructed geometries. Furthermore we show that Si-terminated surfaces exhibit a p(2×1) re...

We compare the reflectance and stability of multilayers comprising either Si/Mo, Si/Mo2C, Si/B4C, Si/C, or Si/SiC bilayers, designed for use as extreme-ultraviolet (EUV) reflective coatings. The films were deposited by using magnetron sputtering and characterized by both x-ray and EUV reflectometry. We find that the new Si/SiC multilayer offers the greatest spectral selectivity at the longer wa...

We propose structural and electronic properties of recently synthesized SiC nanotubes. The nanotubes with a Si to C ratio of 1:1 exhibit rich morphologies and are shown to belong to two distinct categories that are close in energies but show significant differences in electronic and transport properties. Similarities and differences are invoked with the case of BN nanotubes to explain the obser...

In this paper, we study the electrochemical anodization of n-type heavily doped 4 H-SiC wafers in a HF-based electrolyte without any UV light assistance. We present, in particular, the differences observed between the etching of Si and C faces. In the case of the Si face, the resulting material is mesoporous (diameters in the range of 5 to 50 nm) with an increase of the 'chevron shaped' pore de...

the relationship between added value of economic activities and the governments budget along with the impact of this budget on the employment of economic activities are among the issues that economic decision-makers and analysts assume to be crucial. classification of statistical data has not yet allowed experts and decision-makers to evaluate the governments role in production and employment i...

Drag reduction has become a serious issue in recent years in terms of energy conservation and environmental protection. Among diverse approaches for drag reduction, superhydrophobic surfaces have been mainly researched due to their high drag reducing efficiency. However, due to limited lifetime of plastron (i.e., air pockets) on superhydrophobic surfaces in underwater, the instability of dewett...

A series of 3C-SiC films have been grown by a novel method of solid-gas phase epitaxy and studied by Raman scattering and scanning electron microscopy (SEM). It is shown that during the epitaxial growth in an atmosphere of CO, 3C-SiC films of high crystalline quality, with a thickness of 20 nm up to few hundreds nanometers can be formed on a (111) Si wafer, with a simultaneous growth of voids i...