This letter presents the design and characterization of a Doherty power amplifier for K-band applications based on GaAs 150-nm pseudomorphic HEMT (pHEMT) technology Qorvo. For output combiner, wideband approach, embedding capacitance active devices in is applied. A state-of-the-art bandwidth 4 GHz achieved: 21–25-GHz range, above 29.5 dBm, with an associated added efficiency (PAE) higher than 3...

At 60GHz, it becomes difficult to achieve a high power added efficiency (PAE) and large output power for CMOS power amplifier (PA). A parallel class-A and AB pseudo Doherty PA is designed in CMOS 65 nm process to obtain a high PAE and large output power. The PA achieves a 9.8-dB gain at 60GHz. The measured large signal results show that a maximum power added efficiency (PAE) of 14.3% and 12.0% ...

In this paper, a complete design procedure, together with robust system validation approaches, is presented for implementing a high-performance re-configurable digital predistortion (DPD) test platform for compensating for nonlinear distortion and memory effects induced by radio frequency (RF) power amplifiers (PAs) in the transmitters of modern wireless communication systems. This hardware and...

A Memory Cross Volterra model for Doherty power amplifiers (PA) with delay mismatch is presented in this letter. During the design process of amplifier, gain, efficiency and operation bandwidth are mostly considered. Delay difficult to avoid kind dual-path circuit, which reduces modeling performance traditional behavioral models. The proposed Model (MCVM) derived from combination three memory p...

The Doherty Power Amplifier (DPA) was invented in the far 1936 by W. H. Doherty, at the Bell Telephone Laboratories of Whippany, New Jersey (Doherty, 1936). It was the results of research activities devoted to find a solution to increase the efficiency of the first broadcasting transmitters, based on vacuum tubes. The latter, as it happens in current transistors, deliver maximum efficiency when...