We present a method for converting photoluminescence images into carrier lifetime images for siliconwafers with inhomogeneous lifetime distributions, such as multi-crystalline silicon wafers, based on a calibration factor extracted from a separate, homogeneous, mono-crystalline calibration wafer and simple optical modelling of the photoluminescence signal from both the calibrationwafer and the ...

Absfnzst-Static and dynamic properties of dispersive optical bistability (OB) in semiconductor lasers biased from below to above threshold has been investigated both theoretically and experimentally. The OB result is found to be varied continuously from below to above threshold; Although conventionally the OB switch-off time in dispersive semiconductor laser ampliers is limited by the effective...

A new theoretical model to calculate the effective surface recombination velocity ($a) of a high-low junction with an arbitrary impurity distribution is presented. The model is applied to erfc-diffused pp+ junctions using experimental data of bandgap narrowing, lifetime and mobility. Bandgap narrowing is shown to degrade the minority carrier reflecting properties of the high-low junction. Compu...

Low surface recombination velocity is critical to the performance of minority carrier devices. Minority carrier lifetime in double heterostructures sDHsd of 0.53-eV p-GaInAsSb confined with 1.0-eV p-AlGaAsSb, and grown lattice-matched to GaSb, was measured by time-resolved photoluminescence. The structures were designed to be dominated by the heterointerface while minimizing the contribution of...

Hybrid silicon nanocrystal (Si-NC)/poly(3-hexylthiophene) (P3HT) films serve as the active layers of quantum dot/polymer hybrid photovoltaics. To achieve effective photovoltaic properties, it is necessary to enhance the charge carrier mobility and carrier density of the P3HT films. A 50- and 12-fold enhancement of the hole mobility and hole density, respectively, was achieved along the out-of-p...

Bulk-heterojunction organic photovoltaic (BHJ-OPV) technology promises high efficiency at ultralow cost and weight, with potential for nontraditional applications such as building-integrated photovoltaic (PV). There is a widespread presumption that the complexity of morphology makes carrier transport in OPV irreducibly complicated and, possibly, beyond predictive modeling. However, understandin...

The quantum efficiency and carrier lifetime that decide the photoconduction (PC) efficiencies in the metal oxide semiconductor nanowires (NWs) have been investigated. The experimental result surprisingly shows that the SnO2, TiO2, WO3, and ZnO NWs reveal extraordinary quantum efficiencies in common, which are over one to three orders of magnitude lower than the theoretical expectation. The surf...

The reliability and performance of NMOSFET asymmetric LDD devices (with no LDD on the source side) are compared with that of conventional LDD devices. The results show that asymmetric LDD devices exhibit higher Idsat and larger Isub . To maintain the same hot-carrier lifetime, asymmetric LDD devices must operate at lower Vdd . For the same hot-carrier lifetime, we show that ring oscillators wit...

Accurately measuring the bulk minority carrier lifetime is one of the greatest challenges in evaluating photoactive materials used in photovoltaic cells. One-photon time-resolved photoluminescence decay measurements are commonly used to measure lifetimes of direct bandgap materials. However, because the incident photons have energies higher than the bandgap of the semiconductor, most carriers a...