We have investigated the role of temperature in the degradation of GaN High-Electron-Mobility-Transistors (HEMTs) under high-power DC stress. We have identified two degradation mechanisms that take place in a sequential manner: the gate leakage current increases first, followed by a decrease in the drain current. Building on this observation, we demonstrate a new scheme to extract the activatio...

Gate degradation in high electron mobility transistors (HEMTs) under OFF-state stress results from the high electric field near the gate edge. We investigate the evolution of this field over time in AlGaN/ GaN HEMTs upon OFF-state stress using a combination of electroluminescence (EL) microscopy and spectroscopy. EL analysis suggests that the electric field at the sites of generated surface def...

0026-2714/$ see front matter 2011 Elsevier Ltd. A doi:10.1016/j.microrel.2011.09.018 ⇑ Corresponding author. E-mail address: [email protected] (E.A. Douglas). AlGaN/GaN High Electron Mobility Transistors were found to exhibit a negative temperature dependence of the critical voltage (VCRI) for irreversible device degradation to occur during bias-stressing. At elevated temperatures, devices exhib...

Thin oxides (4 nm) grown on deuterium-implanted silicon substrates were investigated for the first time. It was observed that deuterium implantation at a light dose of 1 x 1014/cm2 at 25 keV significantly reduced the leakage current through the oxide. A reduction in electron trap density has also been observed for this oxide. An increase in leakage current, observed for both higher and lower en...

The authors show that in all-metallic Josephson field effect transistors, the statistics of electron flow due to gate leakage current is imprinted onto switching and explains its reduction.

Conductive atomic force microscopy, scanning electron microscopy, and x-ray diffraction were used to determine the effects of Ga/N flux ratio on the conductivity of current leakage paths in GaN grown by molecular beam epitaxy. Our data reveal a band of fluxes near Ga /N 1 for which these pathways ceased to be observable. We conclude that changes in surface defects surrounding or impurities alon...

We report on measurements of capacitors with about 1 pF of capacitance, which have unmeasurably small leakage at very low frequencies, placing a lower bound of about 1019[2 on the parallel resistance at an effective frequency of 1 mHz. These measurements are made possible by two themes: the use of vacuum-gap capacitors (i.e., no dielectric material, operated in vacuum), and detection of leakage...

The mechanism of the antifungal action of AKD-2C was studied by using Torulaspora delbrueckii IFO 1621 as a model. AKD-2C slightly inhibited the incorporation of radioactive precursors into protein, RNA and lipid, but not into DNA. On the other hand, AKD-2C greatly enhanced the leakage of K+ ions from treated cells and showed a potent effect on liposomal glucose leakage. Using electron microsco...

This paper demonstrates the feasibility of creating specific defects in double-heterostructure InGaN/GaN commercial light-emitting diodes by neutron irradiation. Using controlled neutron energy, only one failure mechanism can be activated. Defects are located on the side of the chip and increase the leakage current driven by the well-known Poole–Frenkel effect with Ec − ET = 130 meV electron tr...

Field programmable gate arrays (FPGAs) are one of the most widespread reconfigurable devices in which various functions can be implemented by storing circuit connection information and logic values into configuration memories. One of the most important issues in the modern FPGA is the reduction of its static leakage power consumption. Flex Power FPGA, which has been proposed to overcome this pr...