Scanning tunnelling microscopy and spectroscopy experiments complemented by first-principles calculations have been conducted to study the electronic structure of 4 monolayer Bi(110) nanoribbons on epitaxial graphene on silicon carbide [4H-SiC(0001)]. In contrast with the semimetal property of elemental bismuth, an energy gap of 0.4 eV is measured at the centre of the Bi(110) nanoribbons. Edge ...

Introduction Scaling and integration of complementary metaloxide-semiconductor devices have made great development in the pursuit of higher performance and lower power consumption. Elemental devices of field effect transistors have been going through a transition from planar to three-dimensional structures for overcoming the physical limitation of thickness for the gate insulator. However, due ...

Using an ultrathin (∼ 15 nm in thickness) molybdenum oxide (MoOx, x < 3) layer as a transparent hole selective contact to n-type silicon, we demonstrate a room-temperature processed oxide/silicon solar cell with a power conversion efficiency of 14.3%. While MoOx is commonly considered to be a semiconductor with a band gap of 3.3 eV, from X-ray photoelectron spectroscopy we show that MoOx may be...

Electron-phonon coupling plays a key role in a variety of elemental excitations and their interactions in semiconductor nanostructures. Here we demonstrate that the relaxation rate of free excitons in a single ZnTe nanobelt (NB) is considerably enhanced via a nonthermalized hot-exciton emission process as a result of an ultrastrong electron-phonon coupling. Using time-resolved photoluminescence...

This paper presents what is to our knowledge the first evaluation of laser-induced breakdown spectroscopy (LIBS) studies on elemental composition detection and identification by employing a femtosecond (fs) fiber laser. Qualitative LIBS spectra were obtained in ambient air using a 1030 nm fs fiber laser. Specific ion and neutral emission lines of different materials have been characterized, inc...

Structural transformations on elemental semiconductor surfaces typically occur above several hundred degrees Celsius, and the atomic motions involved are extremely rapid and difficult to observe. However, on the (111) surface of germanium, a few lead atoms catalyze atomic motions so that they can be observed with a tunneling microscope at temperatures below 80 degrees C. Mass transport and stru...

Boron, discovered as an element in 1808 and produced in pure form in 1909, has still remained the last elemental material, having stable natural isotopes, with the ground state crystal phase to be unknown. It has been a subject of long-standing controversy, if α-B or β-B is the thermodynamically stable phase at ambient pressure and temperature. In the present work this enigma has been resolved ...

A microelectronic biosensor was subjected to in vivo exposure by implanting it in the vicinity of m. trapezii (Trapezius muscle) from cattle. The implant is intended for the continuous monitoring of glucose levels, and the study aimed at evaluating the biostability of exposed semiconductor surfaces. The sensor chip was a microelectromechanical system (MEMS) prepared using 0.25 µm complementary ...

Silicondiselenide is a semiconductor and exists as an insoluble polymer (SiSe2) n which is prepared by reacting elemental silicon with selenium powder in the temperature range of 400-850 °C. Herein, we report on the synthesis, isolation, and characterization of carbene stabilized molecular silicondiselenide in the form of (cAAC)2Si2Se4 (3) [cAAC = cyclic alkyl(amino)carbene]. 3 is synthesized v...

In this work, the optical characteristics of monolithic passively mode-locked lasers (MLLs) fabricated from 1.24-μm InAs dots-in-a-Well (DWELL), 1.25-μm InGaAs single quantum well (SQW), and 1.55-μm GaInNAsSb SQW structures grown using elemental source molecular beam epitaxy (MBE) are reported. 5 GHz optical pulses with subpicosecond RMS jitter, high pulse peak power (1W) and narrow pulse width...