نتایج جستجو برای: etching

تعداد نتایج: 11276  

2006
JING JI JIANMIN MIAO

This paper presents developed processes for silicon microneedle arrays microfabrication. Three types of microneedles structures were achieved by isotropic etching in inductively coupled plasma (ICP) using SF6/O2 gases, combination of isotropic etching with deep etching, and wet etching, respectively. A microneedle array with biodegradable porous tips was further developed based on the fabricate...

ژورنال: سنجش و ایمنی پرتو 2015

In this paper, application of the CR-39 passive nuclear track detector for spectrometry of alpha particles is investigated. To this end, a standard Am-241 source as the alpha radiation source, and brass collimators with different heights for energy determination of alpha particles were utilized. The detectors were irradiated by alpha particles in the energy range of 0.8 to 4.8 MeV and then were...

2008
Ellis Meng Po-Ying Li Yu-Chong Tai

Parylene C, an emerging material in microelectromechanical systems, is of particular interest in biomedical and lab-on-a-chip applications where stable, chemically inert surfaces are desired. Practical implementation of Parylene C as a structural material requires the development of micropatterning techniques for its selective removal. Dry etching methods are currently the most suitable for bat...

2016
Chenning Jin Bingjun Yu Chen Xiao Lei Chen Linmao Qian

Friction-induced selective etching provides a convenient and practical way for fabricating protrusive nanostructures. A further understanding of this method is very important for establishing a controllable nanofabrication process. In this study, the effect of etching temperature on the formation of protrusive hillocks and surface properties of the etched silicon surface was investigated. It is...

2014
A. H. M. Ali S. Sobri

The process of etching is the most crucial part of the work of manufacturing printed circuit boards (PCB). In the etching process by nitric acid, a spent etching waste solution of composition 250 g/L HNO3, 30-40 g/L Cu, 30-40 g/L Sn, 30-40 g/L Pb and 20-25 g/L Fe is produced. High metal concentrations in the spent etching waste solution make it a viable candidate for the recovery of metals. Rec...

2015
Laura Alves Bastos Ana Beatriz Silva Sousa Brahim Drubi-Filho Fernanda de Carvalho Panzeri Pires-de-Souza Lucas da Fonseca Roberti Garcia

OBJECTIVES The aim of this study was to evaluate the effect of pre-etching on the bond strength of silorane-based composite specific adhesive system to dentin. MATERIALS AND METHODS Thirty human molars were randomly divided into 5 groups according to the different bonding strategies. For teeth restored with silorane-based composite (Filtek Silorane, 3M ESPE), the specific self-etching adhesiv...

2005
Weidong Jin

This work characterized the Cl2/HBr ion-enhanced plasma-surface interactions with poly-silicon as a function of the gas composition, ion energy, ion incident angle and other important process parameters. A realistic inductively coupled plasma beam apparatus capable of generating ions and neutrals representative of a real commercial etcher was constructed and utilized to simulate accurately a hi...

Journal: :CoRR 2007
G.-J. Wang W.-Z. Chen K. J. Chang

A cost effectively method to fabricate nanopores in silicon by only using the conventional wet-etching technique is developed in this research. The main concept of the proposed method is a two-step etching process, including a premier double-sided wet etching and a succeeding track-etching. A special fixture is designed to hold the pre-etched silicon wafer inside it such that the track-etching ...

2006
JING JI JIANMIN MIAO

This paper presents a developed process for fabrication of hollow silicon microneedle arrays. The inner hollow hole and the fluidic reservoir are fabricated in deep reactive ion etching. The profile of outside needles is achieved by the developed fabrication process, which combined isotropic etching and anisotropic etching with inductively coupled plasma (ICP) etcher. Using the combination of S...

2007
S. Hamaguchi

Molecular dynamics (MD) simulations have been used to study surface reaction dynamics of Si and Si02 etching by halogens. To perform classical MD simulations for Si02 etching reaction by halogens (C1 or F), we have constructed new sets of twoand three-body interatomic potential functions based on potential energy data obtained from ab initio quantum mechanical calculations of the electronic sta...

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