Further improvement of the power conversion efficiencies of conventional perovskite ferroelectric oxides has been strongly impeded by their wide band gaps. Here, we use several band gap engineering strategies to design low band gap ferroelectric materials from first principles. We show that polarization rotation is useful for reducing the band gaps of strongly distorted perovskites. A variety o...

Electric-field control of spin-dependent properties has become one of the most attractive phenomena in modern materials research due to the promise of new device functionalities. One of the paradigms in this approach is to electrically toggle the spin polarization of carriers injected into a semiconductor using ferroelectric polarization as a control parameter. Using first-principles density-fu...

A metal-ferroelectric-semiconductor (MFS) structure was used as a nonlinear capacitor in a series resonance circuit. The following materials were used as components of the MFS structure: aluminium as the metal electrode, Bi4Ti3O12 film as the ferroelectric, and p-type silicon as the semiconductor. The system was driven by a single frequency at suitably chosen amplitudes. Besides the sequences o...

| Ferroelectric materials, because of their robust spontaneous electrical polarization, are widely used in various applications. Recent advances in modelling, synthesis and characterization techniques are spurring unprecedented advances in the study of these materials. In this Review, we focus on thin-film ferroelectric materials and, in particular, on the possibility of controlling their prope...

Innovations in nanogenerator technology foster pervading self-power devices for human use, environmental surveillance, energy transfiguration, intelligent storage systems, and wireless networks. Energy harvesting from ubiquitous ambient mechanical, thermal, solar energies by nanogenerators is the hotspot of modern electronics research era. Ferroelectric materials, which show spontaneous polariz...

Despite remarkable progress in developing multifunctional materials, spin-driven ferroelectrics featuring both spontaneous magnetization and electric polarization are still rare. Among such ferromagnetic ferroelectrics are conical spin spiral magnets with a simultaneous reversal of magnetization and electric polarization that is still little understood. Such materials can feature various multif...

Scanning force microscopy (SFM) is becoming a powerful technique with great potential both for imaging and for control of domain structures in ferroelectric materials at the nanometer scale. Application of SFM to visualization of domain structures in ferroelectric thin films is described. Imaging methods of ferroelectric domains are based on the detection of surface charges in the noncontact mo...

Submitted for the MAR13 Meeting of The American Physical Society Realization of Negative Capacitance with Topological Insulator Based MOS Capacitor1 HUI YUAN, GMU, KAI ZHANG, ODU, HAO ZHU, HAITAO LI, DIMITRIS IOANNOU, GMU, HELMUT BAUMGART, ODU, CURT RICHTER, NIST, QILIANG LI, GMU, ECE, GEORGE MASON UNIVERSITY TEAM, SEMICONDUCTOR AND DIMENSIONALMETROLOGY DIVISION OF NIST TEAM, ECE, OLD DOMINION ...