In this paper, we propose a unified framework for Quantum-corrected drift-diffusion (QCDD) models in nanoscale semiconductor device simulation. QCDD models are presented as a suitable generalization of the classical drift-diffusion (DD) system, each particular model being identified by the constitutive relation for the quantum-correction to the electric potential. We examine two special, and re...

The capabilities of Horizontal Current Bipolar Transistor (HCBT) technology for radio frequency (RF) integrated circuit (IC) design is analyzed. The HBCT, with its novel technological approach and integration with existing CMOS technologies, is entering the testing phase on IC level. The demanding RF integrated circuit requirements and design issues in the frequency range 0.9 – 5 GHz are presen...

The aim of this work is to simulate correctly in 3D space the phenomena that govern relaxation semiconductors. To avoid relevant constraints inadequate mesh a new technique for refining irregular meshing has been creating. Each length sample will be considered as partial sum geometric series, calculation argument allow calculate distance between nodes. In paper we proposed use an algorithm comb...

Abstract A high breakdown voltage silicon-germanium heterojunction bipolar transistor operated over a wide temperature range from 300 K to 10 has been investigated. The measured Gummel characteristics illustrate that the collector current and base both shift higher as decreases. f T /f max are extracted be 23/40 GHz at 300K, 28/40 90 K, 25/37GHz 10K, respectively. effective amplification become...

We develop a new formulation of the Control Volume Finite Element Method (CVFEM) with a multidimensional Scharfetter-Gummel (SG) upwinding for the drift-diffusion equations. The formulation uses standard nodal elements for the concentrations and expands the flux in terms of the lowest-order Nedelec H(curl,Ω)-compatible finite element basis. The SG formula is applied to the edges of the elements...

Purpose: To investigate the ophthalmological characteristics and to evaluate the magnocellular function in Russian orphanage children with fetal alcohol syndrome (FAS). Methods: In the study 100 children aged 10-16 from Russian (St Petersburg) orphanages were examined: 50 with FAS and 50 control children. In the first study all 100 children were tested with distant visual acuity with subjective...

AlGaAs/GaAs HBTs are generating interest for their superior power performance in the 1-5 GHz frequency regime for applications such as wireless LANs and cellular telephones. Much of this interest stems from the fact that HBTs exhibit excellent linearity compared to other power devices. There has been little work done to understand and model the linearity of these devices. In this thesis the lin...

IMPATT (IMPact Avalanche ionization and Transit Time) diodes are principal active elements for use in millimetric generators. Semiconductor structures suitable for fabrication of continuos-mode IMPATT diodes have been well known for a long time (Scharfetter & Gummel, 1969; Howes & Morgan, 1976). They have been utilized successfully in many applications in microwave engineering. The possibilitie...

Charge dynamics play essential role in many practical applications such as semiconductors, electrochemical devices and transmembrane ion channels. A Maxwell-Ampère Nernst-Planck (MANP) model that describes charge via concentrations the electric displacement is able to take effects beyond mean-field approximations into account. To obtain physically faithful numerical solutions, we develop a stru...