This paper presents the design methodologies and implementation of HEMT RF down conversion Mixer for 1.8 GHz to 5 GHz wireless and mobile applications.In many recent receiver designs, the front-end mixer determines the receiver's sensitivity and better isolation for the system. Single transistor mixer are developed for such an applications i.e. a Common source configuration, where the LO signal...

We report on high frequency (HF) and noise performances of AlSb/InAs high electron mobility transistor (HEMT) with 100 nm gate length at room temperature in low-power regime. Extrinsic cut-off frequencies fT/f max of 100/125 GHz together with minimum noise figure NF(min) = 0.5 dB and associated gain G(ass) = 12 dB at 12 GHz have been obtained at drain bias of only 80 mV, corresponding to 4 mW/m...

High electron mobility transistor (HEMT) structures of AlInGaN/AlN/InGaN/GaN were grown by metal-organic chemical vapor deposition. A combination of low growth rate and high growth temperature during synthesis of the InGaN channel layer led to significant improvement in HEMT electron transport properties. The improvement was correlated with an evolution of both surface roughness and photolumine...

The potential impact of GaN-based high electron mobility transistor (HEMT) with two channel layers of GaN/InAlGaN is reported. Using two-dimensional and two-carrier device simulations, we investigate the device performance focusing on the electrical potential, electron concentration, breakdown voltage and transconductance (gm). Also, the results have been compared with structure of AlGaN/GaN HE...

In this letter, we present a new technology to increase the breakdown voltage of AlGaN/GaN high-electronmobility transistors (HEMTs) grown on Si substrates. This new technology is based on the removal of the original Si substrate and subsequent transfer of the AlGaN/GaN HEMT structure to an insulating carrier wafer (e.g., glass or polycrystalline AlN). By applying this new technology to standar...

This paper presents a systematic approach to designing negative-resistance and Colpitts oscillators using p-HEMT transistor. Various models such as, common source and common gate configuration in negative-resistance oscillators, common source series feedback in Colpitts oscillator is selected to analyze the output power and stability presented by the p-HEMT transistor. These oscillators are des...

Metamorphic HEMT (MHEMT) structures on As, Sb, and P-based buffers with different grading profiles were grown by molecular beam epitaxy. Structural, electrical, and optical characterization were used to correlate buffer layer design and growth parameters with channel carrier mobility, surface morphology, and photoluminescence efficiency. All MHEMTs studied in this work exhibited excellent trans...

Highly effective cystic fibrosis (CF) transmembrane conductance regulator (CFTR) modulator therapies (HEMT), including elexacaftor-tezacaftor-ivacaftor, correct the underlying molecular defect causing CF. HEMT decreases general symptom burden by improving clinical metrics and quality of life for most people with CF (PwCF) eligible CFTR variants. This has resulted in more pregnancies women livin...

An attractive candidate for space and aeronautic applications is the high-power miniaturizing electric propulsion technology device, gallium nitride high electron mobility transistor (GaN HEMT), which representative of wide bandgap power electronic devices. The cascode AlGaN/GaN HEMT a common structure typically composed high-voltage depletion-mode low-voltage enhancement-mode silicon (Si) MOSF...