We have demonstrated a heterojunction bipolar transistor using a novel compound collector (CCHBT) design that allows a low-knee voltage and high-breakdown voltage to be obtained simultaneously. The novel aspect of this design is to use a short wide band-gap collector only over a narrow portion of the collector, where the field is highest. This allows support of high fields while maintaining a l...

INTRODUCTION The last decade has seen a massive device research effort in Si and SiGe NPN bipolar transistors. The fate of Si technology had already been prematurely declared a few years ago when it was estimated that conventional Si NPN devices would never see their cut-off frequencies go beyond the 5-10 GHz range. Surprisingly, the early to mid 90’s has seen an explosion in Si NPN bipolar dev...

We design and theoretically analyze a heterojunction bipolar transistor (HBT) electro-optic (EO) modulator with a composition graded SiGe base. The waveguide has a large cross-section of 1 microm for ease of fiber alignment. At a base-emitter bias of V BE = 2.5 V, a pi-phase shift requires 74.5 microm interaction length for TM polarization at lambda = 1.55 microm. The total optical attenuation ...

The growth and device characterization of an InGaP/GaAs double-heterojunction bipolar transistor is reported, the device is grown in a solid source molecular beam epitaxy system equipped with a valved phosphorus cracker. Various designs of base–collector (B–C) junction are used to eliminate the current blocking effect caused by the conduction band discontinuity. The results show that a chirped ...

To explore monolithically integrated phototransmitters, a graded-index quantum well laser was integrated with a selectivity regrown heterojunction bipolar transistor (HBT). The laser utilized a p-up configuration, and the HBT used collector down geometry. This scheme allowed the devices to be interconnected through the n +-GaAs substrate. The threshold current (It,,) for the ridge waveguide las...

We report an InP/InGaAs/InP double heterojunction bipolar transistor fabricated in a triplemesa structure, exhibiting simultaneous 404 GHz fτ and 901 GHz fmax. The emitter and base contacts were defined by electron beam lithography with better than 10 nm resolution and smaller than 20 nm alignment error. The base-collector junction has been passivated by depositing a SiNx layer prior to benzocy...

A physics-based multicell electrothermal equivalent circuit model is described that is applied to the large-signal microwave characterization of AlGaAs/GaAs HBT’s. This highly efficient model, which incorporates a new multifinger electrothermal model, has been used to perform dc, small-signal and loadpull characterization, and investigate parameter-spreads due to fabrication process variations....

Typical Field Programmable Gate Arrays (FPGAs) are generally used in signal processing, image processing and rapid prototyping applications. The integration of Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) devices with CMOS allows a new family of FPGAs to be created. This paper elaborates new ideas in designing high-speed SiGe BiCMOS FPGAs based on the Xilinx 6200. The paper ...

In this paper, a new simulation method for two-tone characteristics calculations and the third-order intercept point (OIP3) of heterojunction bipolar transistor (HBT) in large-scale time domain is proposed. Base on waveform relaxation (WR) and monotone iterative (MI) methods, we solve a set of nonlinear ordinary differential equation (ODE) of equivalent circuit. With this approach, the two-tone...