The current state of thin film heterojunction solar cells based on cuprous oxide (Cu₂O), cupric oxide (CuO) and copper (III) oxide (Cu₄O₃) is reviewed. These p-type semiconducting oxides prepared by Cu oxidation, sputtering or electrochemical deposition are non-toxic, sustainable photovoltaic materials with application potential for solar electricity. However, defects at the copper oxide hetero...

The effect of embedding Au nanoparticles (NPs) in a BiVO4/Fe2O3 heterojunction for photoelectrochemical water splitting is studied here for the first time. The present nanostructured heterojunction offers three major advantages over pristine BiVO4 and Fe2O3: (i) the formation of a heterojunction between BiVO4 and Fe2O3 enhances the charge carrier separation and transfer, (ii) the layer of Fe2O3...

Two-dimensional condensed matter systems provide a fertile ground for the study of strong magnetic and electric field effects. We review the present status of studies in three such systems the electron space-charge layer at the semiconductor surface in a metaloxide-semiconductor (MOS) system, in heterojunction superlattices, and at the surface of liquid helium. In addition, we present the resul...

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Tunnel FETs are a promising alternate to MOSFETs for low power design due to the ability to scale threshold voltage and hence supply voltage, without increase in OFF currents. However, they suffer from low ON currents. Demonstrated here is theenhancement in ION in arsenide–antimonide staggered-gap heterojunction (hetj) tunnel field-effect transistors (TFETs) by engineering the effective tunneli...

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In the framework of effective-mass envelope function theory, including the effect of Rashba spin-orbit coupling, the binding energy E(b) and spin-orbit split energy Г of the ground state of a hydrogenic donor impurity in AlGaN/GaN triangle-shaped potential heterointerface are calculated. We find that with the electric field of the heterojunction increasing, (1) the effective width of quantum we...

This paper describes the development of a heterojunction AlGaAs/GaAs PIN diode as a revolutionary improvement as compared to the homojunction GaAs PIN diode commonly used in microwave systems for commercial and military applications. In a heterojunction device the injected carriers from the junction are confined by the bandgap discontinuity between the AlGaAs/GaAs layers. This confinement effec...