نتایج جستجو برای: i v characteristics
تعداد نتایج: 1882161 فیلتر نتایج به سال:
We show that elastic currents that take into account variations of the tunnel transmitivity with voltage and a large ratio of majority to minority spin densities of states of the s band, can account for the low voltage current anomalies observed in magnet-oxide-magnet junctions. The anomalies can be positive, negative or have a mixed form, depending of the position of the Fermi level in the s b...
A theoretical model for quantum well varactors is presented. The model is used to calculate the device C-V and I-V characteristics and very good agreement has been found between the calculated and measured results. Based on the model, a triple barrier double well varactor has been designed and fabricated. A very high capacitance ratio within a very small bias range is achieved, as designed. Det...
A theoretical model for the I-V characteristics of buried-gate GaAs metal semiconductor field-effect transistors has been developed by solving dc continuity equation. This analysis includes the ion implanted buried-gate process. It is shown that the currentvoltage could be rather increased when introducing an optical fiber to the buried-gate GaAs MESFETs structure. The current -voltage characte...
Consideration of the Current-voltage (I-V) characteristics variations of solar modules with temperature and irradiations variations is basic for maximum power point tracking (MPPT). Having a simple and accurate mathematical model for the optimize utilization of the solar modules is essential. In this paper, a novel modeling of photovoltaic systems with novel coefficients is proposed for mathema...
Consideration of the Current-voltage (I-V) characteristics variations of solar modules with temperature and irradiations variations is basic for maximum power point tracking (MPPT). Having a simple and accurate mathematical model for the optimize utilization of the solar modules is essential. In this paper, a novel modeling of photovoltaic systems with novel coefficients is proposed for mathema...
We report a computational study of conformations and charge transport characteristics of biphenyldithiol (BPDT) monolayers in the (sqrt.3 x sqrt.3)R30 degrees packing ratio sandwiched between Au(111) electrodes. From force-field molecular-dynamics and annealing simulations of BPDT self-assembled monolayers (SAMs) with up to 100 molecules on a Au(111) substrate, we identify an energetically favo...
let z2 = {0, 1} and g = (v ,e) be a graph. a labeling f : v → z2 induces an edge labeling f* : e →z2 defined by f*(uv) = f(u).f (v). for i ε z2 let vf (i) = v(i) = card{v ε v : f(v) = i} and ef (i) = e(i) = {e ε e : f*(e) = i}. a labeling f is said to be vertex-friendly if | v(0) − v(1) |≤ 1. the vertex balance index set is defined by {| ef (0) − ef (1) | : f is vertex-friendly}. in this paper ...
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