Luca Pirro, Anuj Girdhar, Yusuf Leblebici, and Jean-Pierre Leburton Beckman Institute, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA Microelectronic System Laboratory, EPFL, Lausanne, CH 1015, Switzerland Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA Department of Electrical and Computer Engineering, University of Illino...

Following absorption of a single photon, angles of simultaneous emission of two electrons from a He n S atom become more correlated with increasing n. We find that the strength of this correlation is due to the two-electron continuum of the electron-impact ionization of the He+ ns ion. The strength is determined by the width of the momentum profile of the ionic ns state but not the strength of ...

The model of a DC glow discharge with metastable argon atoms and dust particles based on the Boltzmann equation for the electron energy distribution function (EEDF), dust particle charging, and balance equation for metastable argon atoms is presented. The processes of direct and stepwise electron impact ionization, metastable-metastable collisions, and recombination of electrons and ions on the...

Abstract Stripping cross sections in nitrogen have been calculated using the classical trajectory approximation and the Born approximation of quantum mechanics for the outer shell electrons of 3.2GeV I− and Cs ions. A large difference in cross section, up to a factor of six, calculated in quantum mechanics and classical mechanics, has been obtained. Because at such high velocities the Born appr...

Plasma ionization composition and level population calculations require, in particular, the cross sections of direct ionization from each quantum state into each state which may be generated by means of removal of any electron. We analysed published data and propose here an empirical formula for cross sections of direct electron-impact ionization of positive atomic ions. The cross sections give...

With the rapid feature size reduction of modern semiconductor devices accurate description of hot-carrier phenomena is becoming very important. Frequently used carrier transport models are the traditional drift-diffusion model and energy-transport models which also consider the average carrier energy as an independent solution variable. Recent results show, however, that the average energy is i...

A realistic full-band Monte Carlo (FBMC) model is applied to study the effect of doping concentration on multiplication gain and excess noise factor for electronand hole-initiated multiplication in thin InP p–i–n diodes with a range of multiplication lengths of w = 0.1 and 0.24 lm. This model predicts a reduction in excess noise factor for both electronand hole-initiated multiplication as the d...

Published experimental photon and electron impact ionization cross sections of CH4 have been reviewed and analyzed. Absolute partial ionization oscillator strengths (fij) for CH4 , CH + 3 , CH + 2 , CH , H and H2 have been obtained. Electron impact ionization cross sections are recommended based on agreement between the oscillator strength values derived from photoionization and electron impact...

Penning ionization of iodomethane (CH3I) and diiodomethane (CH2I2) upon collision with metastable He(2S) atoms was studied by collision-energy/electron-energy resolved two-dimensional Penning ionization electron spectroscopy (2D-PIES) over a wide range of collision energies (20 – 350 meV). Collision energy dependence of partial ionization cross sections (CEDPICS) indicates that the interaction ...

Recent experimental results will be reviewed for the atomic (e,2e) ionisation process at incident energies in the 'low energy' region, from a few eV to about lO0eV above threshold. This region is particularly interesting because it embodies all the possible complexities that can be present in the electron-impact ionisation process, such as distortions, multiple scattering, correlations, postcol...