This paper presents the results of investigations on integrated inductors for a new low cost MCM-D substrate technology. The results are focused on the analysis of design options and design parameter for planar spiral inductors. Measurements on test structures were used to quantify process tolerances and inductor performance and to set up accurate models for em-simulations. Simulation results o...

Abstract—In this paper, a high-conversion-ratio bidirectional dc–dc converter with coupled inductor is proposed. In the boost mode, two capacitors are parallel charged and series discharged by the coupled inductor. Thus, high step-up voltage gain can be achieved with an appropriate duty ratio. The voltage stress on the main switch is reduced by a passive clamp circuit. Therefore, the low resist...

igh performance microprocessors require a lowvoltage, high-current power supply with fast transient response. Therefore, interleaved multiphase synchronous buck converters have gained popularity as the VRM for these microprocessors. Multiphase converters must share load current to balance thermal stress on each phase, so it’s important to address current sensing and sharing. You can use the cur...

This paper presents a novel wide tuning range CMOS Voltage Controlled Oscillator (VCO). VCO uses an on-chip variable inductor as an additional variable element to extend the tuning range of VCO. The fabricated variable inductor achieves the variable range of 35%. The VCO was fabricated using 0.35 μm standard CMOS process, and can be tuned continuously from 2.13 GHz to 3.28 GHz (tuning range of ...

A 2.5D EM-simulator has been used to study how planar inductor performance is influenced by an epitaxial substrate. The simulation model used has been adjusted and verified by measurements on an octagonal inductor fabricated in a submicron CMOS technology. The impact of the epitaxial layer has been studied by sweeping it’s permittivity, thickness, and resistivity. The results show that typical ...

On-chip circular vertical solenoid inductors have been designed and fabricated using standard 6-metal layer CMOS process. Compared to the 4.1nH circular planar spiral inductor on the same chip, the 4.8nH solenoid inductor gives about 20% increase in maximum quality-factor (QF) and 50% increase in self-resonant frequency (SRF), but only occupies 20% of the area. The inductor impedance can be mod...

A new structure of the solenoid inductor is presented in this paper. The proposed solenoid inductor has been simulated in a standard 0.18um one-poly-six-metal (1P6M) CMOS process. The proposed inductor products higher quality factor and inductance value in compare with the traditional designs. Furthermore, the new structure shows more improvement in the peak of quality factor so the number of t...

In this paper, parametric analysis of miniature on-chip 3-D inductor is presented. The effect of conductor width, spacing between conductors and number of turns of inductor on Quality factor (Q-factor), inductance and Self-resonant frequency (SRF) are studied. Improvement in percentage increase of Q-factor is due to increase in conductor width. It can be found that ~72% of on-chip area reductio...

A new integrated magnetic full wave dc/dc converter1 that provides flexible transformer design by incorporating an independent output inductor winding is introduced. The transformer is implemented on a traditional three-leg magnetic core. The inductor winding can be separately designed to control the output current ripple. The cross-sectional area of the inductor core leg can be reduced dramati...

In this paper, an integrated passive device (IPD) inductor modeling is demonstrated. The IPD technology is a system in package (SiP) solution where passive devices with high quality can be fabricated on a chip and then connect with another circuit chip by using flip-chip micro-bump bonding. For an RF circuit simulation, the IPD inductor model is built and verified from the measurement results. ...