An array of inverted InGaAs metal–semiconductor–metal (MSM) photodetectors has been integrated into a silicon substrate using a low temperature In–Au wafer bonding technique. The total thickness of the bonding metal layers is less than 1 mm. It is shown that the photocurrent of the back illuminated InGaAs MSM photodetectors after bonding increases by 70% compared to the front illuminated MSM me...

The effects of CH&I, reactive ion etching (RIE) on the optical properties of an InP/InGaAs multiple-quantum-well structure have been investigated by low-temperature photoluminescence (PL). The structure consisted of eight InGaAs quantum wells, lattice matched to InP, with nominal thicknesses of 0.5, 1,2,3,5, 10,20, and 70 monolayers, respectively, on top of a 200~nm-thick layer of InGaAs for ca...

由于InGaAs与Si之间存在7.7%的晶格失配，因此难以获得制备方式简单、性能良好的InGaAs/Si雪崩光电二极管（APD）。从理论上提出了一种从源头弱化InGaAs/Si晶格失配对APD性能影响的办法，即在InGaAs/Si键合界面引入一层a?Ge或poly?Ge键合层，模拟比较了InGaAs/Si APD性能随键合层厚度的变化情况。研究指出，a?Ge和poly?Ge材料作为键合层对载流子有阻挡或俘获作用，因此器件能够获得超低暗电流，且由于键合层导带势垒对载流子的阻挡作用，APD雪崩之后出现了光暗电流间隙，可以在较小暗电流情况下获得大的光电流。当a?Ge厚度为0.5 nm时，APD雪崩击穿前增益可达最大值451.3，而当poly?Ge厚度为0.5 nm时，雪崩击穿前增益仅为7.9。这种差异是由于poly?Ge键合层处价带出现了势阱，载流子浓度下降。该工作为超低噪声和高增益InG...

Charge injection transistors have been implemented in molecular-beam-epitaxy-grown InGaAs/InALAs/InGaAs and InGaAs/InPDnGaAs heterosuuctures using a selfaligned process for the collector stripe definition. Scattering parameters have been measmd in the frequency range from 100 MHz to 40 GHz. InP-banier devices show the best microwave performance ever reported for a real-space transfer transistor...

We have studied the influence of misfit dislocations on hole accumulation in the base layer of an n-AlGaAs/p-GaAs/n-InGaAs heterojunction phototransistor ~HPT!. Spatially and temporally resolved cathodoluminescence ~CL! measurements reveal that variations in the hole accumulation is caused primarily by strain-induced defects which impede the transport of holes in the collector. The lifetime of ...

Graphene has been used to synthesize graphene quantum dots (GQDs) via pulsed laser ablation. By depositing the synthesized GQDs on the surface of InGaP/InGaAs/Ge triple-junction solar cells, the short-circuit current, fill factor, and conversion efficiency were enhanced remarkably. As the GQD concentration is increased, the conversion efficiency in the solar cell increases accordingly. A conver...

We report silicon waveguide butt-coupled p-i-n InGaAs photodetectors epitaxially grown on silicon-on-insulator substrates by metalorganic chemical vapor deposition. The InGaAs absorption layer that is lattice-matched to InP is selectively grown on patterned SOI substrates, employing metamorphic growth of GaAs and InP buffer layers. We measure a dark current of 2.5 μA and a responsivity of 0.17 ...

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Using a combination of temperature and pressure dependence measurements, we investigate the relative importance of recombination processes in InGaAs-based QW lasers. We find that radiative and Auger recombination are important in high quality InGaAs material. At 1.5μm, Auger recombination accounts for 80% Ith at room temperature reducing to ~50% at 1.3μm and ~15% at 980nm. We also find that Aug...