We report the fabrication of a photonic platform consisting of single wire light-emitting diodes (LED) and photodetectors optically coupled by waveguides. MOVPE-grown (metal-organic vapor-phase epitaxy) InGaN/GaN p-n junction core-shell nanowires have been used for device fabrication. To achieve a good spectral matching between the emission wavelength and the detection range, different active r...

in present work, we have calculated the electronic properties including density of states (dos) and electron density for gan, inn and in wurtzite phase for x=0.5. the study is based on density functional theory (dft) with full potential linearized augmented plane wave method (fp-lapw) by generalized gradient approximation (gga-pbesol) for calculating electronic properties. in this report we con...

Strained InGaN layers grown on a c-plane sapphire is known to have strong spontaneous and piezoelectric polarization field, where the discontinuity of polarization at heterojunction is to induce bounded surface charges [1]. This polarization-related phenomenon can affect the internal electric field of active region and induce the quantum-confined stark effect (QCSE) at quantum well. QCSE result...

In this work we analyze the theoretical photoluminescence (PL) spectra from strained AlGaInN/InGaN and InGaN/AlGaInN superlattices (SLs). The calculations are performed within the k.p framework by means of the solution of the 8!8 effective mass Kane Hamiltonian generalized to treat layers of different materials. Strain effects due to lattice mismatch and the split-off-hole band were also taken ...

We study thermal annealing effects on the size and composition variations of indium-aggregated clusters in two InGaN thin films with photoluminescence ͑PL͒ in the yellow and red ranges. The methods of investigation include optical measurement, nanoscale material analysis, and theoretical calculation. Such a study is important for determining the relation between the band gap and the average indiu...

Multicolor single InGaN/GaN dot-in-nanowire light emitting diodes (LEDs) were fabricated on the same substrate using selective area epitaxy. It is observed that the structural and optical properties of InGaN/GaN quantum dots depend critically on nanowire diameters. Photoluminescence emission of single InGaN/GaN dot-in-nanowire structures exhibits a consistent blueshift with increasing nanowire ...

We present a systematic study of strain effects on the electronic band structure of the group-IIInitrides (AlN, GaN and InN). The calculations are based on density functional theory (DFT) with band-gap-corrected approaches including hybrid functional and quasiparticle G0W0 methods. We study strain effects under realistic strain conditions, hydrostatic pressure and biaxial stress. The strain-ind...

We developed a double-recess etching process and a new Digital-Oxide-Deposition (DOD) technique to fabricate 180nm low-threshold GaN Metal-OxideSemiconductor Double Heterostructure Field Effect Transistors (MOS-DHFET). Two device layer structures, InGaN channel design and InGaN back-barrier design, were employed to improve the confinement of TwoDimensional Electron Gas (2DEG) and mitigate the s...

GaN and InGaN layers grown around ZnO nanopillars by metalorganic vapor phase epitaxy (MOVPE) are investigated by means of photoluminescence (PL) and locally resolved cathodoluminescence (CL). A multi layer growth process involving deposition at different growth conditions in a step-wise manner has been employed for the coaxially grown GaN. Then InGaN/GaN quantum wells and barriers have been de...