Ingot multicrystalline silicon (Mc-Si) needs to be improved in quality and reduced cost compared with Czochralski monocrystalline silicon. A uniform dense quartz nucleation layer was obtained by the electrophoretic deposition of powder on surface wafer. The deposited wafer annealed at 600 °C for 1 h, one side glued crucible. During growth Mc-Si crystal, can play a role. results show that averag...

Transient global simulations were carried out to investigate the effect of argon flow on oxygen and carbon coupled transport in an industrial directional solidification furnace for quasi-single crystalline silicon ingots. Global calculation impurity gas melt was based a fully thermal fields. Numerical results show that rate affects intensity along melt–gas surface, but has no significant patter...

The wire bow angle is an important factor that affects the shape precision of ingot after diamond sawing process. In this research, angles inside and outside were recorded with a high-speed camera. effects processing parameters such as tension force, feed speed, velocity on analyzed. A numerical simulation model in process presented paper to describe ingot. It was shown smaller than for all par...

SiC inclusions in a multicrystalline silicon ingot have negative effect on the performance of solar cells. The migration behavior and aggregation mechanism particles melt during directional solidification process was studied. Results show that collide aggregate due to flow. Larger is easily deposited at bottom melt, whereas smaller are pushed top melt. Meanwhile, migrate edge under electromagne...

The detailed knowledge of the distributions of carrier lifetimes, impurities and crystal defects in silicon ingots is key for understanding and improving wafer quality as well as solar cell processing steps. In this work, we have applied a quasi-steady-state photoconductance tester developed for the use on ingots to the measurement of lifetimes and dissolved iron concentrations along a p-type m...

High nitrogen doped 300 mm silicon wafers annealed in 100 % argon ambient were investigated whether modified pulling conditions will lead to improved slip behavior and homogeneous radial oxygen precipitation. It turned out that increasing of the cooling rate during crystal pulling is beneficial on these wafer defect parameters. The void morphology was investigated by TEM and oxygen precipitatio...