Trench gate structure represents the latest of Insulated Gate Bipolar Transistor(IGBT). Because there are great differences in model analysis coordinate system and carrier transport between trench planar structure, modeling method using will inevitably have deviation. Based on characteristics system, base region is divided into PNP PIN by considering two-dimensional effect carriers. According t...

In this paper, we introduce the new generation 3300V HiPak2 IGBT module (130x190)mm employing the recently developed TSPT+ IGBT with Enhanced Trench MOS technology and Field Charge Extraction (FCE) diode. The new chip-set enables IGBT modules with improved electrical performance in terms of low losses, good controllability, high robustness and soft diode recovery. Due to the lower losses and th...

The behaviour in terms of robustness during turn-off of power IGBT modules is presented. The experimental characterisation is aimed to identify the main limits during turn-off in power IGBT modules in typical hard switching applications. In this paper an experimental characterization of high power IGBT modules at output currents beyond RBSOA, at high junction temperatures and under different dr...

This paper presents a new electro-thermal coupling simulation method for evaluating the reliability of IGBT modules, which combines numerical power loss model and finite element model. To illustrate method, specific case Infineon FF50R12RT4 module operated with an SPWM signal is considered. Temperature stress data are obtained analyzed via simulation, service life modules calculated accordingly...

In this paper, we propose a novel method to improve the circuit simulation accuracy of insulated-gate bipolar transistor (IGBT) power devices under short-circuit state. To determine IGBT junction temperature, transient thermal resistance an device on order micro seconds is estimated by simulations. The saturation current without self-heating effects based test and resistance. SPICE parameter ex...

Abstract Power electronic converter (Power Electronic Transformer, PET) is widely used in power systems, so the research on PET electromagnetic disturbance (Electro Magnetic Interference, EMI) cannot be ignored. consists of many insulated gate bipolar transistors (Insulate-Gate Bipolar Transistor, IGBT). A large number levels will cause problems such as small simulation steps and long times. To...