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High voltage and high current power modules are key components for traction applications. In the future, railway locomotives, tramways and elevators will be equipped with Insulated Gate Bipolar Transistor (IGBT) modules. In this field of application high reliability is of decisive importance, especially for aluminum bond wires with diameters up to 500 μm, connecting the silicon device with the ...

In this paper review study on different types of Junctionless transistor is promoted. Here a comparative study of SOI, bulk planar, double gate and tunnel Junctionless field effect transistor. It is observed Junctionless transistor exhibits better short channel effects and ON current then inversion mode device. Tunnel Junctionless transistor exhibits the properties of both tunnel FET and Juncti...

Our program involve the synthesis, assembly, and structural and electrical characterization of single crystal Si nanoparticles. The goal of this work is developing high-speed electrical nanoparticle devices. In this article we review the processes needed to demonstrate a vertical transistor built using PtSi as a Schottky barrier source and drain. A surround-gate of Pt is insulated from body of ...

Recently, short channel effects (SCE) and power consumption dissipation problems impose tremendous challenges that need imperative actions to be taken deal with for field effect transistor further scale down as semiconductor technology enters into sub-10 nm node. From 3 node beyond, gate all around steps onto the history stage attributed its improved SCE suppressing ability thanks surrounding s...