Growth of mutually aligned organic nanofibers from functionalised p-quaterphenylene has been demonstrated on a mica substrate via high vacuum sublimation. The fibers bridge the gap between microscopic and macroscopic dimensions according to their typical width in nanometer scale and length up to several hundred micrometers. They are an important step forward towards integrated nanoscopic optoel...

We demonstrate extremely efficient germanium-on-silicon metal-semiconductor-metal photodetectors with responsivities (R) as high as 0.85 A/W at 1.55 microm and 2V reverse bias. Ge was directly grown on Si by using a novel heteroepitaxial growth technique, which uses multisteps of growth and hydrogen annealing to reduce surface roughness and threading dislocations that form due to the 4.2% latti...

There are a range of fundamental challenges associated with scaling optoelectronic devices down to the nano-scale, and past decades have seen significant research dedicated development sub-diffraction-limit optical devices, often relying on plasmonic response metal structures. At longer wavelengths mid-infrared, dramatic changes in traditional nanophotonic materials, reduced efficiency active r...

We have characterized the fundamental photoluminescence (PL) properties of individual, isolated indium phosphide (InP) nanowires to define their potential for optoelectronics. Polarization-sensitive measurements reveal a striking anisotropy in the PL intensity recorded parallel and perpendicular to the long axis of a nanowire. The order-of-magnitude polarization anisotropy was quantitatively ex...

Silicon photonics has experienced phenomenal transformations over the last decade. In this paper, we present some of the notable advances in silicon-based passive and active optical interconnect components, and highlight some of our key contributions. Light is also cast on few other parallel technologies that are working in tandem with silicon-based structures, and providing unique functions no...

Introduction: Negative resistance elements are important components in oscillator circuits and form the basis of many other nonlinear circuits. Resonant tunnelling diodes (RTDs) have attracted much attention owing to their wide-bandwidth negative differential resistance (NDR), up to hundreds of GHz [1]. Because RTDs can be easily integrated in electronic and optoelectronic circuits, the applica...

Harnessing light with photonic circuits promises to catalyse powerful new technologies much like electronic circuits have in the past. Analogous to Moore's law, complexity and functionality of photonic integrated circuits depend on device size and performance scale. Semiconductor nanostructures offer an attractive approach to miniaturize photonics. However, shrinking photonics has come at great...