نتایج جستجو برای: intersubband transitions
تعداد نتایج: 74833 فیلتر نتایج به سال:
By analyzing the nonlinear optical response in an asymmetric coupled double quantum well structure based on the intersubband transitions, we show that a giant Kerr nonlinearity with a relatively large cross-phase modulation coefficient can be used to produce efficient photonphoton entanglement and implement an all-optical two-qubit quantum polarization phase gate. We also demonstrate that such ...
Far-infrared spontaneous emission at 300 K and lower temperatures, due to intersubband transitions in self-organized In0.4Ga0.6As/GaAs quantum dots, has been characterized. Measurements were made with a multidot layer near-infrared ~;1 mm! interband laser. The far-infrared signal, centered at 12 mm, was enhanced after the interband transition reached threshold at 300 K. The results are explaine...
A pulsed metal-organic chemical vapor deposition technique is developed for the growth of high-quality AlN/GaN superlattices SLs with intersubband ISB transitions at optical communications wavelengths. Tunability of the AlN and GaN layers is demonstrated. Indium is shown to improve SL surface and structural quality. Capping thickness is shown to be crucial for ISB transition characteristics. Ef...
We review our recent progress on the fabrication of near-infrared photodetectors based on intersubband transitions in AlN/GaN superlattice structures. Such devices were first demonstrated in 2003, and have since then seen a quite substantial development both in terms of detector responsivity and high speed operation. Nowadays, the most impressive results include characterization up to 3 GHz usi...
Monte Carlo simulation of carrier dynamics and far-infrared absorption in a selectively-doped p-type multilayer Ge structure with vertical transport was performed to test a novel terahertz laser concept. The design exploits the known mechanism of THz amplification on intersubband transitions in p-Ge, but with spatial separation of light hole accumulation regions from doped regions, which allows...
During the last 20 years since the first Quantum Cascade Laser (QCL) [1] there has been substantial development. The long-wavelength limit exploiting intersubband transitions below the reststrahlenband with frequencies in the terahertz range [2] is currently an area of active research but efforts are also being made in the opposite direction towards the short-wavelength limit. As the lasing is ...
In this paper we propose and present detailed calculations on a new method for using the intersubband transiiion in modulation doped semiconductor quantum wells gown from Alpa l ,k and GaAs in infra red devices (modulators and detectors) working at 10 um wavelength. The quantum wells are embedded near the the surface of a thick AlAs layer (1-9 microns) and capped by a metal electrode and coupli...
نمودار تعداد نتایج جستجو در هر سال
با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید