A novel ion-imprinted electrochemical sensor based on AlGaN/GaN high electron mobility transistors (HEMTs) was developed to detect trace amounts of phosphate anion. This sensor combined the advantages of the ion sensitivity of AlGaN/GaN HEMTs and specific recognition of ion imprinted polymers. The current response showed that the fabricated sensor is highly sensitive and selective to phosphate ...

Ion-sensitive, field-effect transistors (ISFET) have been useful biosensors in many applications. However, the signal-to-noise ratio of the ISFET is limited by its intrinsic, low-frequency noise. This paper presents an ISFET capable of utilizing lateral-bipolar conduction to reduce low-frequency noise. With a particular layout design, the conduction efficiency is further enhanced. Moreover, the...

Abstract This study demonstrated a polycrystalline-silicon (poly-Si)-based double-gate (DG) ion-sensitive field-effect transistors (DG-ISFETs) using APTES/SiO2 stack-sensing membrane. The membrane enhanced the single-gate (SG) sensitivity, and suppressed hysteresis. DG structure was preferred to have capacitive coupling effect amplify sensitivity of ISFETs. sensitivities SG- DG-ISFETs were appr...

A time-of-flight-type flow-velocity sensor employing the in-situ electrochemically generation of ion-tracers is developed. The sensor consists of an ion generator and two downstream-placed pH-sensitive Ta2O5-gate ISFETs (ion-sensitive field-effect transistor) that detect generated Hor OH-ions. The results of the developed flow-velocity sensor under different modes of ion generation are presente...

Since Ion Sensitive Field Effect Transistors (ISFETs) were introduced by Bergveld in 1970, much effort is put into new and improved materials for device optimization and sensitivity enhancement [1]. ISFET based biosensors have a fast response, are suitable for miniaturization and arrays can be made for simultaneous measurement of various parameters. Actually, ISFET device production relies on s...