Tungsten trioxide (WO3) films have been coated on indium thin oxide (ITO) conductive glass substrate, using aqueous solution of peroxotungstic acid (PTA) by the sol-gel dip coating method. X-ray diffractometery (XRD) analysis confirmed monoclinic and triclinic structure for the film and powdered WO3 respectively. Fourier transforms infrared spectroscopy (FT-IR) exhibit...

Indium tin oxide (ITO) thin films were prepared by RF sputtering of ceramic ITO target in pure argon atmosphere at a high base pressure of 3 10 mbar without substrate heating and oxygen admittance. The use of pure argon during deposition resulted in films with high transparency (80–85%) in the visible and IR wavelength region. The films were subsequently annealed in air in the temperature range...

The concentrated electric field (E-field) in the vicinity of a Voltage-biased near-field optical probe is used to modulate the photoluminescence of organic thin films on the ∼100 nm scale. The samples are bilayers comprising a self-organized-thin-film (50-500 nm) layer of zinc-octakis (â-decoxyethyl) porphyrin (ZnODEP) on top of an indium tin oxide (ITO) coated glass electrode. The Al coated-op...

An experimental study was carried out of photovoltaic effects occurring in the structure Cu/CuTCNQ/ITO(A1). Prototype devices were fabricated by growing CuTCNQ organic thin films directly on a copper substrate and then laying the semitransparent electrodes (glass/ITO or glass/Al) on the CuTCNQ/Cu. By choosing appropriate conditions for formation of the film in the liquid phase, for example solu...

Variable angle reflectance FTIR was used to investigate the reflectance of thin films of either indium tin oxide (ITO) or fluorine-doped tin oxide (SFO) on glass substrates in the mid-IR. The reflectance was observed to depend on the incident angle, wavenumber, and the polarization used. The Drude model and the Fresnel equations for reflection at a single dielectric boundary were used to interp...

Thin films of Al2O3 have been deposited on ITO-coated glass substrates by a sol-gel dipcoat process. Aluminium isopropoxide (Al(OC3H7)3) was used as the Al source material. X-ray diffraction measurements show that these films are amorphous. Scanning electron microscopy and atomic force microscopy images of the films have revealed a relatively flat surface with no cracks. The dielectric properti...

Indium tin oxide (ITO) thin films were sputter-deposited at ambient temperature on a glass-like substrate that was periodically nanostructured by UV nanoimprint lithography. Cross gratings of the corrugated and conformal ITO, with different periods and modulation depths, were tailored to exhibit light trapping or antireflection properties at specific spectral windows by combined optical simulat...

Index-matched indium tin oxide (ITO) electrodes for capacitive touch screen panels have been fabricated to improve optical transmittance and reduce the difference of reflectance (deltaR) between the etched and un-etched regions. 8.5 nm Nb2O5 and 49 nm SiO2 thin films were deposited by magnetron sputtering as index-matching layers between an ITO electrode and a glass substrate. In case of 30 nm ...

Transparent conducting oxides (TCO’s) have widespread uses as electrodes in solar cells and liquid crystal displays and as heat-reflecting window coatings. The commercial TCO of choice is ITO (tin-doped indium oxide). ITO has a typical conductivity of 1!5]103 S/cm and a transparency 85—90% in thin films (1). In addition to ITO, which has been reviewed (2), a number of promising TCO’s consisting...

Thin films of porous anodic aluminum oxide (AAO) on tin-doped indium oxide (ITO) substrates were fabricated through evaporation of a 1,000- to 2,000-nm-thick Al, followed by anodization with different durations, electrolytes, and pore widening. A faster method to obtain AAO on ITO substrates has been developed, which with 2.5 vol.% phosphoric acid at a voltage of 195 V at 269 K. It was found th...