نتایج جستجو برای: low noise trans conductance amplifier
تعداد نتایج: 1462961 فیلتر نتایج به سال:
This paper presents design concept of Operational Transconductance Amplifier (OTA). The 0.18μm CMOS process is used for Design and Simulation of this OTA. This OTA having a bias voltage 1.8 with supply voltage 1.8 V. The design and Simulation of this OTA is done using CADENCE Spectere environment with UMC 0.18μm technology file. The Simulation results of this OTA shows that the open loop gain o...
A low-noise CMOS amplifier operating at a low supply voltage is developed using the two noise reduction techniques of autozeroing and chopper stabilization. The proposed amplifier utilizes a feedback with virtual grounded input-switches and a multiple-output switched opamp. The low-noise amplifier fabricated in a 0.18-μm CMOS technology achieved 50-nV/ √ Hz input noise at 1-MHz chopping and 0.5...
This paper presents a low-power fractional-N synthesizer for BLE with gate-switching charge pump (CP) and high-speed prescaler. To reduce the current mismatch under low supply voltage, master-slave rail-to-rail operational trans-conductance amplifier (OTA) structure is employed to CP; Current self-matching technique guarantees charging equal discharging current. The embedded logic gates power s...
This report describes the design of a two-stage broadband low-noise-amplifier (LNA) for the frequency range from 3 GHz to 9 GHz, using GaAs MESFETs with an ft of 20 GHz. The passive components were implemented with microstrips. In the frequency band of operation, the achieved noise figure (NF) is within 0.5 dB from the minimum NF of a single transistor, the power gain is 15 dB, flat within 1 dB...
A low-noise CMOS amplifier operating at a 1-V supply voltage is developed using the two noise reduction techniques of autozeroing and chopper stabilization. The proposed amplifier utilizes a feedback with virtual grounded input-switches and a multiple-output switched op-amp. The low-noise amplifier fabricated by a 0.18-μm CMOS technology was measured at a 1-V power supply, and achieved low nois...
In this paper, a new image-reject low noise amplifier is designed for the 2.4 GHz industrial-scientific-medical (ISM) band. An inter-stage T-structure filter is used in the low noise amplifier design to provide 35-dB image rejection. The goal of this design is to merge the image-reject function into the low noise amplifier.
The CDMA standard operating over the wireless environment along with various other wireless standards places stringent specifications on the RF Front end. Due to possible large interference signal tones at the receiver end along with the carrier, the Low Noise Amplifier (LNA) is expected to provide high linearity, thus preventing the inter-modulation tones created by the interference signal fro...
A low noise amplifier has been designed using a 2SK117 N channel J-FET as the input device in a cascode [1] configuration. Noise measurements on this amplifier yield a low frequency noise current of 0.25 fA/Yfu and a voltage noise of less than 1.2 n V NHz in the 500 Hz to 50 kHz region. Bloyet et al. [2] suggest a figure of merit of the product of the noise voltage and current as being appropri...
A new circuit technique for voltage gain enhancement in CMOS op amp design suitable for low voltage and high speed operation is presented in this paper. A negative conductance is used to cancel the positive output conductance of an amplifier thereby reducing the total equivalent output conductance and increasing the voltage gain of the amplifier. The negative conductance is derived from the out...
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