A new multiferroic material, CuBr(2) , is reported for the first time. CuBr(2) has not only a high transition temperature (close to liquid nitrogen temperature) but also low dielectric loss and strong magnetoelectric coupling. These findings reveal the importance of anion effects, in the search for the high temperature multiferroics materials among these low-dimensional spin systems.

Despite the simplicity of the hexagonal graphene structure formed by carbon atoms, the electronic behavior shows fascinating properties, giving high expectation for the possible applications of graphene in the field. The Graphene Nano-Ribbon Field Effect Transistor (GNRFET) is an emerging technology that received much attention in recent years. In this paper, we investigate the device performan...

The equilibrium properties of electrolyte solutions over wide ranges of concentration, temperature, and solvent dielectric constant are discussed on a corresponding-states basis. If low-melting salts are used, these properties can be studied up to the pure fused salt. We mainly focus on systems at low reduced temperature, where the depth of the interaction potential is large compared with the t...

We review recent results obtained in the physics of the thermal Casimir force acting between two dielectrics, dielectric and metal, and between metal and semiconductor. The detailed derivation for the low-temperature behavior of the Casimir free energy, pressure and entropy in the configuration of two real dielectric plates is presented. For dielectrics with finite static dielectric permittivit...

It is shown that the dielectric response of Ba(0.77)Sr(0.23)TiO(3) nanoparticles at temperatures below 200 K has a frequency and temperature dependence in agreement with the Debye theory with a single relaxation time, which exhibits the Arrhenius law. By contrast, at temperatures above 210 K the dielectric response exhibits a broad range of relaxation times characteristic of relaxor-ferroelectr...

Articles you may be interested in Temperature-dependent dielectric nonlinearity of relaxor ferroelectric Pb0.92La0.08Zr0.52Ti0.48O3 thin films Appl. Temperature dependent polarization switching properties of ferroelectric Pb0.92La0.08Zr0.52Ti0.48Oδ films grown on nickel foils Appl. Estimation of intrinsic contribution to dielectric response of Pb0.92La0.08Zr0.52Ti0.48O3 thin films at low freque...

some issues; leakage, tunneling currents, boron diffusion are threatening sio2 to be used as a good gate dielectric for the future of the cmos (complementary metal- oxide- semiconductor) transistors. for finding an alternative and novel gate dielectric, the nio (nickel oxide) and pva (polyvinyl alcohol) nano powders were synthesized with the sol-gel method and their nano structural properties w...

A low-temperature specific heat study has been performed on the insulating giant dielectric constant material CaCu3Ti4O12 and two related compounds, Bi2/3Cu3Ti4O12 and La0.5Na0.5Cu3Ti4O12, from 0.6 to 10 K. From analyzing the specific heat data in a very low-temperature range, 0.6–1.5 K, and moderately low-temperature range, 1.5–5 K, in addition to the expected Debye terms, we observed signific...

Graphene ranks highly as a possible material for future high-speed and flexible electronics. Current fabrication routes, which rely on metal substrates, require post-synthesis transfer of the graphene onto a Si wafer, or in the case of epitaxial growth on SiC, temperatures above 1000 degrees C are required. Both the handling difficulty and high temperatures are not best suited to present day si...

A theory of low-temperature ohmic dc transport in dirty 2D quasi-one dimensional electronic crystals, such as charge-density wave (CDWs) thin films, is presented. At low temperatures we find that Efros-Shklovskii (ES) variable-range hopping (VRH) laws dominate the transport. At the lowest energies of the problem we find a usual impurity-independent linear Coulomb-gap (CG), g( ) ∝ , in the singl...