The paper examines a well-known experimental property of increase of the magnetoresistance effect in a metal observed with a decrease of the metal temperature. This property is explained by the fact that magnetoresistance is a quantity proportional to the relaxation time of the electric conduction of the metal sample which is a parameter observed in the absence of the magnetic field. Since the ...

Theory of magnetoresistance in films of dilute magnetic alloys. Abstract Giordano measured the magnetoresistance of dilute magnetic alloys Au(Fe) films of different thickness. He explained the difference in the magnetic field saturation for different thickness by the magnetic surface anisotropy for the impurities has been suggested and evaluated earlier, which is due to spin-orbit scattering in...

A negative isotropic magnetoresistance effect more than three orders of magnitude larger than the typical giant magnetoresistance of some superlattice films has been observed in thin oxide films of perovskite-like La(0.67)Ca(0.33)MnOx. Epitaxial films that are grown on LaAIO(3) substrates by laser ablation and suitably heat treated exhibit magnetoresistance values as high as 127,000 percent nea...

We report a large tunneling anisotropic magnetoresistance (TAMR) in (Ga,Mn)As lateral nanoconstrictions. Unlike previously reported tunneling magnetoresistance effects in nanocontacts, the TAMR does not require noncollinear magnetization on either side of the constriction. The nature of the effect is established by a direct comparison of its phenomenology with that of normal anisotropic magneto...

We have performed magnetotransport, magnetization, and structural experiments on sputtered Fe~30 Å!/Cr~12 Å! ~110! superlattices that were annealed at temperatures up to 400 °C. Interestingly, their giant magnetoresistance (Dr) is enhanced at intermediate temperatures, and strongly decreased at higher temperatures. If normalized to the antiferromagnetic coupling fraction of sample, the magnetor...

Abstract We report the observation of the spin valve effect in (Ga,Mn)As/p-GaAs/(Ga,Mn)As trilayer devices. Magnetoresistance measurements carried out in the current in plane geometry reveal positive magnetoresistance peaks when the two ferromagnetic layers are magnetized orthogonal to each other. Measurements carried out for different post-growth annealing conditions and spacer layer thickness...

We demonstrate giant magnetoresistance in Fe/MoS2/Fe junctions by means of ab initio transport calculations. We show that junctions incorporating either a monolayer or a bilayer of MoS2 are metallic and that Fe acts as an efficient spin injector into MoS2 with an efficiency of about 45%. This is the result of the strong coupling between the Fe and S atoms at the interface. For junctions of grea...

Magnetoresistance in two-dimensional array of Ge/Si was studied for a wide range of the conductance, where the transport regime changes from hopping to diffusive one. The behavior of magnetoresistance is similar for all samples; it is negative in weak fields and becomes positive with increasing of magnetic field. Negative magnetoresistance can be described in the frame of weak localization appr...

The MBE-grown GaAs/AlGaAs superlattice with Si-doped barriers has been used to study a 3D→2D transition under the influence of the in-plane component of applied magnetic field. The longitudinal magnetoresistance data measured in tilted magnetic fields have been interpreted in terms of a simple tight-binding model. The data provide values of basic parameters of the model and make it possible to ...

It has been observed that the low temperature magnetoresistance behaviour in polycrystalline colossal magnetoresistive (CMR) manganites differ significantly from the single crystals. The polycrystalline samples show large magnetoresistance at temperatures much below the ferromagnetic transition temperature where the magnetoresistance of single crystals is very small. This has conventionally bee...