The metal-assisted chemical etching (MACE) technique is commonly employed for texturing the wafer surfaces when fabricating black silicon (BSi) solar cells and considered to be a potential improve efficiency of traditional Si-based cells. This article aims review MACE along with its mechanism Ag-, Cu- Ni-assisted etching. Primarily, several essential aspects fabrication BSi are discussed, inclu...

In this work, we introduce a maskless, resist-free rapid prototyping method to fabricate three-dimensional structures using electron beam induced deposition (EBID) of amorphous carbon (aC) from a residual hydrocarbon precursor in combination with metal-assisted chemical etching (MaCE) of silicon. We demonstrate that EBID-made patterned aC coating, with thickness of even a few nanometers, acts a...

Sub-100-nm silicon nanohole arrays were fabricated by a combination of the site-selective electroless deposition of noble metals through anodic porous alumina and the subsequent metal-assisted chemical etching. Under optimum conditions, the formation of deep straight holes with an ordered periodicity (e.g., 100 nm interval, 40 nm diameter, and high aspect ratio of 50) was successfully achieved....

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In this report, the micron-long Si nanowires (NWs) array is grown by a metal assisted chemical etching (MACE) process using Ag as the noble metal catalyst in HF/H2O2 solution. These Si NWs are decorated with arbitrary shaped ultrasmall Si nanocrystals (NCs) due to the side wall etching of the Si NWs. The MACE grown samples exhibit strong PL emission in the visible region and quantum confinement...

Metal assisted chemical etching (MacEtch) is a recently developed anisotropic wet etching method that is capable of producing high aspect ratio semiconductor nanostructures from patterned metal film. In this review article, we highlight the characteristics of MacEtch of silicon (Si) including controllability of the produced sidewall roughness, the inherent high aspect ratio, the weak crystal or...