نتایج جستجو برای: metal oxide

تعداد نتایج: 356484  

Journal: :Physical review letters 2012
P D C King R H He T Eknapakul P Buaphet S-K Mo Y Kaneko S Harashima Y Hikita M S Bahramy C Bell Z Hussain Y Tokura Z-X Shen H Y Hwang F Baumberger W Meevasana

We demonstrate the formation of a two-dimensional electron gas (2DEG) at the (100) surface of the 5d transition-metal oxide KTaO3. From angle-resolved photoemission, we find that quantum confinement lifts the orbital degeneracy of the bulk band structure and leads to a 2DEG composed of ladders of subband states of both light and heavy carriers. Despite the strong spin-orbit coupling, our measur...

Journal: :ACS applied materials & interfaces 2010
Michael J Coutts Hadi M Zareie Michael B Cortie Matthew R Phillips Richard Wuhrer Andrew M McDonagh

The synthesis of hexagonal ring-shaped structures of zinc oxide using nanosphere lithography and metal/metal oxide sputtering is demonstrated. This synthesis exploits the surface re-emission of zinc oxide to deposit material in regions lying out of the line-of-sight of the sputtering source. These rings can nucleate the hydrothermal growth of zinc oxide crystals. Control over the growth could b...

1998
Joseph P. Dunn Harvey G. Stenger Israel E. Wachs

A systematic catalytic investigation of the sulfur dioxide oxidation reactivity of several binary (MxOy/TiO2) and ternary (V2O5/ MxOy/TiO2) supported metal oxide catalysts was conducted. Raman spectroscopy characterization of the supported metal oxide catalysts revealed that the metal oxide components were essentially 100% dispersed as surface metal oxide species. Isolated fourfold coordinated ...

2014
Edward Namkyu Cho Yong Hyeon Shin Ilgu Yun

Articles you may be interested in Possible unified model for the Hooge parameter in inversion-layer-channel metal-oxide-semiconductor field-effect transistors J. Threshold voltage modeling under size quantization for ultra-thin silicon double-gate metal-oxide-semiconductor field-effect transistor GaN metal-oxide-semiconductor field-effect transistor inversion channel mobility modeling Modeling ...

2014
Karel Žídek Mohamed Abdellah Kaibo Zheng Tõnu Pullerits

Quantum dot (QD)-metal oxide composite forms a "heart" of the QD-sensitized solar cells. It maintains light absorption and electron-hole separation in the system and has been therefore extensively studied. The interest is largely driven by a vision of harvesting the hot carrier energy before it is lost via relaxation. Despite of importance of the process, very little is known about the carrier ...

2015
T. Jaouen E. Razzoli C. Didiot G. Monney B. Hildebrand F. Vanini M. Muntwiler P. Aebi

We report layer-resolved measurements of the unoccupied electronic structure of ultrathin MgO films grown on Ag(001). The metal-induced gap states at the metal/oxide interface, the oxide band gap, and a surface core exciton involving an image-potential state of the vacuum are revealed through resonant Auger spectroscopy of the Mg KL23L23 Auger transition. Our results demonstrate how to obtain n...

2001
T. J. Regan H. Ohldag C. Stamm F. Nolting J. Lüning J. Stöhr R. L. White

A chemical and magnetic characterization of ferromagnet/antiferromagnet interfaces is essential to understand the microscopic origins of exchange anisotropy and other magnetic phenomena. We have used highresolution L-edge x-ray absorption spectroscopy ~XAS!, which is element specific and sensitive to chemical environment and spin orientation, to investigate the interface of antiferromagnetic ox...

2005
Xiao Wang Haydn N G Wadley

Magnetic tunnel junctions (MTJs) require the growth of a thin (∼20 Å) dielectric metal oxide layer, such as Al2O3, on a ferromagnetic metal layer, such as Co, CoFe, or CoNiFe. The atomic assembly mechanisms that combine to form a uniformly thin metal oxide layer on these metal surfaces are not well understood. The application of molecular dynamics simulations to the growth of metal and metal ox...

2015
Woobin Lee Seungbeom Choi Kyung Tae Kim Jingu Kang Sung Kyu Park Yong-Hoon Kim

We report a derivative spectroscopic method for determining insulator-to-semiconductor transition during sol-gel metal-oxide semiconductor formation. When an as-spun sol-gel precursor film is photochemically activated and changes to semiconducting state, the light absorption characteristics of the metal-oxide film is considerable changed particularly in the ultraviolet region. As a result, a pe...

2012
Takashi Mizokawa

Some transition metal oxides have frustrated electronic states under multiphase competition due to strongly correlated d electrons with spin, charge, and orbital degrees of freedom and exhibit drastic responses to external stimuli such as optical excitation. Here, we present photoemission studies on Pr0.55(Ca1 - ySry)0.45MnO3 (y = 0.25), SrTiO3, and Ti1 - xCoxO2 (x = 0.05, 0.10) under laser ill...

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