نتایج جستجو برای: metalorganic framework

تعداد نتایج: 463273  

2014
Jonathan W. Anderson David Donnelly Mark W. Holtz Mark Holtz

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2008
Muhammad Jamil Ronald A. Arif Yik-Khoon Ee Hua Tong John B. Higgins

Journal: :Chemistry of materials : a publication of the American Chemical Society 2017
Berc Kalanyan William A Kimes Ryan Beams Stephan J Stranick Elias Garratt Irina Kalish Albert V Davydov Ravindra K Kanjolia James E Maslar

High volume manufacturing of devices based on transition metal dichalcogenide (TMD) ultra-thin films will require deposition techniques that are capable of reproducible wafer-scale growth with monolayer control. To date, TMD growth efforts have largely relied upon sublimation and transport of solid precursors with minimal control over vapor phase flux and gas-phase chemistry, which are critical...

Journal: :Analytical chemistry 2001
S Santra P Zhang K Wang R Tapec W Tan

A new molecular conjugation method has been developed to label biomolecules with optically stable metalorganic luminophores, such as tris(2,2'-bipyridyl)dichlororuthenium(II) hexahydrate (Rubpy), which are otherwise not possible for direct linking with the biomolecules. Unique biochemical properties of the biomolecule can, thus, be associated with photostable luminophores. This opens a general ...

Journal: :Applied spectroscopy 2009
C Jiménez T Caroff A Bartasyte S Margueron A Abrutis O Chaix-Pluchery F Weiss

The CeO(2)/La(2)Zr(2)O(7)/Ni piled-up structure is a very promising architecture for YBa(2)Cu(3)O(7) (YBCO) coated conductors. We have grown YBCO/CeO(2)/LZO/Ni epitaxial structures by metalorganic decomposition (MOD) and metalorganic chemical vapor deposition (MOCVD) methods. The crystallographic quality of the CeO(2) layer is not well determined by conventional X-ray diffraction (XRD) due to t...

Journal: :Applied Physics Letters 2022

A Langmuir adsorption model of the Si incorporation mechanism into metalorganic vapor-phase epitaxy grown (100) ?-Ga 2 O 3 thin films is proposed in terms competitive surface process between and Ga atoms. The outcome can describe major feature doping indicate a growth rate-dependent behavior, which validated experimentally further generalized to different conditions substrate orientations.

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