Small-signal microwave transistor characteristics are used to construct and fit a comprehensive model of their dynamic behaviour. The model includes thermal effects and trap-related effects, which influences such a large range of frequencies that they are not well characterized by large-signal or pulse measurements alone. Correlation of the model with smallsignal characteristics demonstrates th...

Graphene, after its first production in 2004 have received lots of attentions from researchers because of its unique properties. High mobility, high sensitivity, high selectivity and high surface area make graphene excellent choice for bio application. One of promising graphene base device that has amazingly high sensitivity is graphene field-effect transistor (GFET). This review selectively su...

A comprehensive modeling approach is applied to the study of pHEMT transistors for microwave power amplifier applications. This approach combines physical, electromagnetic and thermal simulations to model large power transistors used in these applications, allowing both the individual finger contribution and the global performance to be investigated in an efficient manner, which can be used wit...