A 5G mm-wave monolithic microwave integrated circuit (MMIC) voltage-controlled oscillator (VCO) is presented in this paper. It designed on GaAs substrate and with 0.25 µm-pHEMT technology from UMS foundry it based pHEMT varactors order to achieve a very small chip size. 0dBm-output power over the entire tuning range 27.67 GHz 28.91 GHz, phase noise of -96.274 dBc/Hz -116.24 at 1 10 MHz offset f...

This letter presents a 67–116-GHz low-noise amplifier (LNA) module with state-of-the-art cryogenic noise performance. The LNA is based on monolithic microwave integrated circuit (MMIC) that fabricated in 50-nm metamorphic high-electron-mobility transistor (mHEMT) technology. MMIC packaged WR10 waveguide split-block housing and uses fused silica <inline-formula xmlns:mml="http://www.w3.org/1998/...

The paper provides an overview on the state of the art and future trends in physics-based electron device modelling for the computer-aided design of monolithic microwave IC’s. After a review of the main physics-based approaches to microwave modelling, special emphasis is placed on innovative developments relevant to circuit-oriented device performance assessment, such as efficient physics-based...

The firstly commercialized millimeter-wave application was the automotive radar, which appeared nearly 10 years ago, for driving safety support. The market size has been growing year by year and is expected to reach a level of around five million units per year in 2016. With the progress in popularity, the radar has been expected to spread even to general cars, therefore, development of lowcost...

This letter presents the design and experimental characterization of a K-band high power amplifier (HPA) monolithic microwave-integrated circuit (MMIC) for next generation very throughput satellites (vHTS). The MMIC is three-stage balanced realized on commercial 100-nm gate length gallium nitride silicon (GaN-Si) technology. compliant with space reliability constraints and, despite larger therm...

This paper presents a method to reveal the channel temperature profile of high electron mobility transistors (HEMTs) in multi-stage monolithic microwave integrated circuit (MMIC). The device used for this study is two-stage X-band low-noise amplifier fabricated using 0.15 <tex-math notatio...

A historical sketch of microwave integrated circuits, monolithic microwave integrated circuits, and their application is presented in this paper.

This paper presents a new monolithic microwave integrated circuit (MMIC) based on coplanar waveguide (CPW) design for a tunable resonator based on RF MEMS. This RF structure, which can be used for system on chip (SOC), is constituted with MEMS Bridge placed between two meander inductors and the tenability is controlled by a variable applied DC voltage. Moreover, this device presents a compactne...

In this project a number of circuits [1-4] with the characteristics of a passive inductor are to be assessed for their suitability for implementation in MMIC applications as a means of introducing a tuning function and as a replacement for the conventional passive inductor.