The charge/discharge phenomenon of capacitance between terminals in a power MOSFET affects on its switching behavior of the device. The input capacitance is composed of the gate-source capacitance CGS and the gate-drain capacitance CGD, which vary with gate voltage VGS. This paper characterizes the relationship between the input capacitance of a SiC MOSFET and the gate voltage with considering ...

The low power consumption and good speed has become an important issues in the minds of consumers as electronic items are increasing in every houses, everyday. VLSI has been very successful in this aspect as new and new technologies are been developed in VLSI, which has lead, a solution to the above problem. DG MOSFET, proposed in 1984 as “XMOS” by ETL is the most promising and leading contende...

This article presents some design guidelines for the RCD snubber of flyback converters. When the MOSFET turns off, a high-voltage spike occurs on the drain pin because of a resonance between the leakage inductor (Llk) of the main transformer and the output capacitor (COSS) of the MOSFET. The excessive voltage on the drain pin may lead to an avalanche breakdown and eventually damage the MOSFET. ...

A thorough investigation of N-channel multifinger MOSFET capacitances in dark and under optical illumination is presented in this paper. The intrinsic and extrinsic capacitances are modelled and analysed considering the scaling effects for sub-micron scale MOSFET. Bias dependence is taken into account and capacitances essential for small signal model for RF frequency operation are evaluated. Th...

This work proposes a vertical gallium nitride (GaN) parallel split gate trench MOSFET (PSGT-MOSFET) device architecture suitable for power conversion applications. Wherein two gates, and field plate are introduced vertically on the sidewalls connected, respectively, to source. Technology computer-aided design (TCAD) simulator was used in process achieve specific on-resistance as low 0.79 mΩ.cm ...

Contemporary MOSFET mathematical models contain many parameters, most of which have little or no meaning to circuit designers. Designers therefore, continue to use obsolete models -such as the MOSFET square law -for circuit design calculations. However, low-voltage, lowpower systems development demands more advanced circuit design techniques. In this paper I present a brief literature review of...

This article presents some design guidelines for the RCD snubber of flyback converters. When the MOSFET turns off, a high-voltage spike occurs on the drain pin because of a resonance between the leakage inductor (Llk) of the main transformer and the output capacitor (COSS) of the MOSFET. The excessive voltage on the drain pin may lead to an avalanche breakdown and eventually damage the MOSFET. ...

This paper deals with the compact modeling of several emerging technologies: first, the double-gate MOSFET (DG MOSFET), and second, the carbon nanotube field-effect transistor (CNTFET). For CNTFETs, we propose two compact models, the first one with a classical behavior (like MOSFET), and the second one with an ambipolar behavior (Schottky-barrier CNTFET). All the models have been compared with ...

After explaining the basic operation of a SiC JFET plus silicon MOSFET cascode circuit, the dynamics of cascode switching will be discussed and the use of a QRR tester to evaluate the reverse-recovery characteristics of a cascode circuit will be explained. A comparison of the cascode’s reverse recovery with that of a SiC MOSFET reveals that the JFET cascode actually performs better than the SiC...