According to Moore’s law, the number of transistor embedded on integrated circuit (IC) doubles approximately every two years. Thus, the size of Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) has to be scaled down as an increase in packing density. In current technology, the size of a transistor has shrunk below 45nm, and it has already reached its physical limit. Any attempt to shri...

In this work, a novel Silicon on Insulator (SOI) MOSFET is proposed and investigated. The drain and source electrode structures are optimized to enhance ON-current while global device temperature and hot carrier injection are decreased. In addition, to create an effective heat passage from channel to outside of the device, a silicon region has embedded in the buried oxide. In order to reduce th...

This paper focuses on the role of the power MOSFET in achieving high-efficiency converter design. It provides a brief overview of current low-voltage MOSFET trench technologies, along with a discussion about onresistance versus gate charge trade-offs for MOSFETs optimized for use as control or synchronous switches. It covers the importance of the integrated Schottky diode (SyncFETTM MOSFET) in ...

Bulk-driven MOSFET technique meets the low-voltage and low-power requirements demanded in the modern analog circuit design. Due to submicron/nanometer technologies and critical short-channel effects, choosing a suitable MOSFET model for circuit design becomes increasingly important. However, the conventional MOSFET models normally set up for the typical gate-driven applications may not perform ...

The feasibility of using dual bias metal oxide semiconductor field effect transistors (MOSFET) detectors with the new hemispherical brass build up cap for in vivo dose measurements in Prostate IMRT treatments was investigated and achieved. A general formalism with various correction factors taken into account to predict Dmax entrance skin dose for the IMRT fields with MOSFETS was developed and ...

We studied the usefulness of a new type of solid-state detector, the OneDose single-use MOSFET (metal oxide semiconductor field effect transistor) dosimeter, for entrance dose measurements for total body irradiation (TBI). The factory calibration factors supplied by the manufacturer are applicable to conventional radiotherapy beam arrangements and therefore may not be expected to be valid for T...

Transistor size is decreasing day by day, therefore it is difficult to overcome the problem of short channel effects. For preventing short channel effects, source/drain engineering, substrate engineering & gate engineering have been introduced. According to chronological growth of VLSI Design, there is need of non-conventional structure of MOSFET and researchers are getting shifted in search of...

The ultimate check of the actual dose delivered to a patient in radiotherapy can only be achieved by using in vivo dosimetry. This work reports a pilot study to test the applicability of a thermoluminescent dosimetric system for performing in vivo entrance dose measurements in external photon beam radiotherapy. The measurements demonstrated the value of thermoluminescent dosimetry as a treatmen...