This paper reports the successful fabrication of a GaN-on-Si high electron mobility transistor (HEMT) with a 1702 V breakdown voltage (BV) and low current collapse. The strain and threading dislocation density were well-controlled by 100 pairs of AlN/GaN superlattice buffer layers. Relative to the carbon-doped GaN spacer layer, we grew the AlGaN back barrier layer at a high temperature, resulti...

Infrared (IR) reflectance spectroscopy is applied to study Si-doped multilayer n+/n0/n+-GaN structure grown on GaN buffer with GaN-template/sapphire substrate. Analysis of the investigated structure by photo-etching, SEM, and SIMS methods showed the existence of the additional layer with the drastic difference in Si and O doping levels and located between the epitaxial GaN buffer and template. ...

With the advent of global warming and energy crises, developing nanomaterial technologies into various nanodevices for energy harvesting has attracted a lot of attentions recently. Of which, nanogenerators by taking advantage of piezoelectric properties of nanowires (NWs) such as wurtzite compound semiconductors of ZnO [1], GaN [2], InN [3] and CdSe [4] can convert mechanical energy into electr...

AlGaN/GaN HEMT is one of attractive candidates for next generation high power devices because of high carrier mobility in 2DEG channels and high breakdown voltage due high critical electric field. In order to apply the AlGaN/GaN HEMTs for power switching applications the normally off operation is required. Enhancement type behavior of GaN HEMT transistors is obtained by using p-type Mg-doped Ga...

Point defects in epitaxial GaN and ZnSe semiconductor layers have been studied using a low-energy positron beam. Ga vacancies are found to be present in n-type GaN grown by metal organic chemical vapor deposition, where the conductivity is due to residual oxygen. When n-type silicon impurity doping is done, clearly less vacancies are observed. In Mgdoped p-type and semi-insulating materials the...

X-ray absorption measurements from relatively high concentrations of Er ~.0.1 at. %! doped in GaN films show that Er occupies the Ga site with an unprecedentedly short Er–N bond length. Electroluminescence intensities from these GaN:Er films correlate with the concentration of Er atoms that replace Ga, not with the abundantly present O impurities in the host. Simple chemical concepts are used t...

Related Articles Enhancement of the photoelectrochemical properties of Cl-doped ZnO nanowires by tuning their coaxial doping profile Appl. Phys. Lett. 99, 262102 (2011) Doping profile of InP nanowires directly imaged by photoemission electron microscopy Appl. Phys. Lett. 99, 233113 (2011) Hafnium-doped GaN with n-type electrical resistivity in the 104cm range Appl. Phys. Lett. 99, 202113 (2011)...

One of the key issues in GaN-based devices is resistivity and technology ohmic contacts to n-type GaN. This work presents, for first time, effective intentional oxygen doping sputtered GaN films obtain highly conductive n+-GaN:O films. We have developed a novel simple method these The based on room temperature magnetron sputtering single crystal bulk target doped with oxygen. exhibit polycrysta...

Heterojunction p-GaN/n-ZnO light emitting diode (LED) structure using Eu-doped ZnO (ZnO:Eu) as an active component is demonstrated in order to realize low-cost and environmentally-friendly red LEDs with sharp linewidth temperature stability against surrounding environment including operating injection current. Chemically stable Al 2 O 3 inserted electron blocking layer between p-GaN ZnO:Eu/n-Zn...

A novel low-temperature method based on a combination of pulsed laser deposition and metalorganic chemical vapour deposition was used to fabricate GaN thin films doped with rare-earth (RE) ions. The films were deposited on GaN/Al2O3 substrates. The x-ray diffraction analysis of these GaN : RE (RE = Eu, Tb) samples showed that the films have the hexagonal phase of GaN and are polycrystalline wit...