Considering the increasing global demand for energy and the harmful ecological impact of conventional energy sources, it is obvious that development of clean and renewable energy is a necessity. Since the Sun is our only external energy source, harnessing its energy, which is clean, non-hazardous and infinite, satisfies the main objectives of all alternative energy strategies. With attractive f...

drain current degradation in 0.35 m n-type lateral diffused metal-oxide-semiconductor transistors J. R. Lee, Jone F. Chen, Kuo-Ming Wu, C. M. Liu, and S. L. Hsu Institute of Microelectronics, Department of Electrical Engineering and Advanced Optoelectronic Technology Center, National Cheng Kung University, No. 1 University Road, Tainan 70101, Taiwan Taiwan Semiconductor Manufacturing Company, L...

Semiconductor-molecule-metal junctions consisting of alkanethiol monolayers self-assembled on both p(+) and n(-) type highly doped Si(111) wires contacted with a 10 µm Au wire in a crossed-wire geometry are examined. Low temperature transport measurements reveal that molecule-induced semiconductor interface states control charge transport across these systems. Inelastic electron tunneling spect...

By linking semiconductor physics and wetting phenomena a brand new effect termed "photoelectrowetting-on-semiconductors" is demonstrated here for a conducting droplet resting on an insulator-semiconductor stack. Optical generation of carriers in the space-charge region of the underlying semiconductor alters the capacitance of the liquid-insulator-semiconductor stack; the result of this is a mod...

Nonvolatile organic field-effect transistor (OFET) memory devices based on pentacene/N,N'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13)/pentacene trilayer organic heterostructures have been proposed. The discontinuous n-type P13 embedded in p-type pentacene layers can not only provide electrons in the semiconductor layer that facilitates electron trapping process; it also works as c...

Solution processed fullerene (C60) molecular floating gate layer has been employed in low voltage nonvolatile memory device on flexible substrates. We systematically studied the charge trapping mechanism of the fullerene floating gate for both p-type pentacene and n-type copper hexadecafluorophthalocyanine (F16CuPc) semiconductor in a transistor based flash memory architecture. The devices base...

Perfect Cooper pair splitting is proposed, based on crossed Andreev reflection (CAR) in a p-type semiconductor-superconductor-n-type semiconductor (pSn) junction. The ideal splitting is caused by the energy filtering that is enforced by the band structure of the electrodes. The pSn junction is modeled by the Bogoliubov-de Gennes equations and an extension of the Blonder-Tinkham-Klapwijk theory ...

Self-assembly of positively charged and charge-neutral tridentate cyclometalated platinum(II) complexes leads to nanowires and the drop-cast film containing these nanowires behaves as a n-type semiconductor.

The ability to send high-speed messages between integrated circuit devices requires both high-frequency receivers and transmitters. The vast majority of integrated circuits are made from silicon-based semiconductors. Suitable receivers of silicon integrated circuits can be constructed from either metal-semiconductor-metal photodiodesl or P-type, intrinsic, N-type (PIN) photodiodes. These receiv...