Electronic states in nanographite ribbons with zigzag edges and zigzag carbon nanotubes are studied using the extended Hubbard model with nearest neighbor Coulomb interactions. The nearest Coulomb interactions stabilize electronic states with the opposite electric charges separated and localized along both edges. Such states are analogous as nanocondensers. Therefore, electric capacitance, defi...

A single-walled carbon nanotube (SW-CNT) is a nano scale tube formed by a cylindrical shell of single atomic layer of carbon atoms. Nanotubes have diameter of a few nm and length up to 100μm so that they form extremely thin wires. The atomic structure of SWCNT can be formed by wrapping a stripe of single atomic layer of graphite sheet along a certain direction, and this direction determines the...

Introduction As a new class of an ultra-high capacity anode material for Li-ion batteries, nano-Si/carbon composites have a considerable potential [1, 2]. In such composites, nano-Si can store lithium faster than bulk Si, and the carbon matrix serves nano-Si with an electrical path to compensate the poor electrical conductivity of Si. Though Si has an extremely high theoretical capacitance up t...

Multi-walled carbon nanotubes (MWCNT)-doped TiO2 thin films were synthesized by the dip-coating method. The obtained products were characterized by SEM, EDX, XRD, and UV-vis absorption spectroscopy. The XRD patterns showed the presence of anatase phase. Absorption spectrum of MWCNT-doped TiO2 revealed a red shift in the optical absorption edge due to carbon doping. The photocatalytic properties...

We report the structural transformations of carbon via melt spinning and subsequent annealing nickel-carbon alloys. attained metastable solid solubility in nickel ribbon by achieving a rapid solidification rate up to 1.6 × 106 K/s. Excess atoms were found be dissolved lattice causing 1.4% strain for an alloy spun at 70 m/s tangential wheel speeds. High temperature heat treatments led precipitat...

Plasma immersion ion implantation (PIII) is an established technique in certain niche microelectronics applications such as the synthesis of silicon-oninsulator. In other applications such as shallow junction formation by plasma doping, trench doping, and fabrication of blue light emitting materials, PIII has unique advantages over conventional techniques and may be the technique of choice in t...

Single layer graphene nano-gaps are fabricated by applying the method of feedback-controlled electroburning to notched ribbon devices, which are plasma etched from CVD grown graphene that is wet-transferred onto pre-patterned metal electrodes. Electrical and structural characterizations show that nanometer size gaps form at the center of the notch. We have processed a total number of 1079 devic...

substitution of two or four carbon atoms by nitrogen in the corannulene molecule as a carbon nanostructure was done and the obtained structures were optimized at mp2/6-31g(d) level of theory. calculations of the nucleus-independent chemical shift (nics) were performed to analyze the aromaticity of the corannulene rings and its derivatives upon doping with n at b3lyp/6-31g(d) level of theory. re...

Carbon-tetrabromide CBr4 is utilized as the p-type doping source in modulation-doped pseudomorphic In0.3Ga0.7Sb /AlxGa1−xSb quantum well structure. Carbon delta-doping is achieved by switching off group III elements while the flow of CBr4 is on during the growth of AlSb barrier layer. The hole mobility of strained In0.3Ga0.7Sb quantum well decreases monotonically from 600 to 400 cm2 /V s while ...