In this paper we present new results on doped c-Si:H thin films deposited by Hot-Wire Chemical Vapour Deposition (HWCVD) in the very low temperature range (125-275 oC). The doped layers were obtained by the addition of diborane or phosphine in the gas phase during deposition. The incorporation of boron and phosphorus in the films and their influence on the crystalline fraction are studied by S...

Mutants of Escherichia coli K-12 defective in the pantothenate permease (panF) were isolated and characterized. The panF mutation resulted in the complete loss of pantothenate uptake and of the ability to use extracellular vitamin for growth. The growth phenotypes of panF panD, panF panB, and panF panC double mutants showed that the cytoplasmic membrane was impermeable to external pantothenate....

Both pand n-channel poly-Si/Si1 Ge /Si sandwiched conductivity modulated thin-film transistors (CMTFTs) are demonstrated and experimentally characterized. The transistors use a poly-Si/Si1 Ge /Si sandwiched structure as the active layer to avoid the poor interface between the gate oxide and the poly-Si1 Ge material. Also an offset region placed between the channel and the drain is used to reduc...

The effect of nitrogen (N14) implant into dual-doped polysilicon gates was investigated. The electrical characteristics of sub-0.25m dual-gate transistors (both pand n-channel), MOS capacitor quasi-static C V curve, SIMS profile, poly-Si gate Rs, and oxide Qbd were compared at different nitrogen dose levels. A nitrogen dose of 5 10 cm 2 is the optimum choice at an implant energy of 40 KeV in te...

Teaching reading functional vocabulary to students with intellectual disability (ID’s) is a challenge for teachers in special schools. They face many obstacles teaching which are caused by various factors, especially student characteristics and learning structures that less practical tend be academic. This study aims measure the effectiveness of using word cards picture improve skills moderate ...

We present results on small-molecule pand n-type organic semiconductors in combination with the highly water repellent fluoropolymer CytopTM as the gate dielectric. Using pentacene and N,N -ditridecylperylene-3,4,9,10-tetracarboxylicdiimide PTCDI-C13 , we fabricated complementary inverters of high electrical quality and stability that are almost unaffected by repeated gate bias stress. The comb...

n-Doping of copper phthalocyanine (CuPc), which has an electron affinity (EA) of 3.52 eV, by decamethylcobaltocene (DMC) is demonstrated. DMC has a remarkably low solid-state ionization energy (IE) of 3.3 eV, as measured by ultra-violet photoemission spectroscopy (UPS). Further UPS measurements show a large 1.4 eV upward shift of the Fermi-level within the single particle gap of CuPc between th...