The introduction of new in situ sensing creates the possibility of directly controlling critical process variables in plasma enhanced chemical vapor deposition systems (PECVD). The complexity of this process makes it necessary to develop empirical models of the system dynamics. This paper describes the experimental and numerical procedures for identifying both transfer function and recurrent ne...

The application of plasma-enhanced chemical vapour deposition (PECVD) in the production and modification of carbon nanotubes (CNTs) will be reviewed. The challenges of PECVD methods to grow CNTs include low temperature synthesis, ion bombardment effects and directional growth of CNT within the plasma sheath. New strategies have been developed for low temperature synthesis of single-walled CNTs ...

We report in this paper on the latest research results of microcrystalline (μc-Si:H) silicon solar cells fabricated in a commercial Oerlikon Solar (former UNAXIS) KAI-S single-chamber PECVD reactor (substrate size up to 35 cm x 45 cm) driven at an excitation frequency of 40.68 MHz. The cell structure consists of a stack of glass/ front-TCO / p-i-n μc-Si:H solar cell / back-contact. Our “in-hous...

This paper reports on the final main results of the Flexcellence project. The project was running for 3 years and its goal was the development of equipments and processes for cost-effective roll-to-roll production of high-efficiency flexible thin-film silicon solar cells and modules. All aspects necessary for the successful implementation of the technology could be considered simultaneously and...

This paper addresses the doping mechanism of amorphous semiconductors through the investigation of boron doped rf co-sputtered amorphous hydrogenated silicon. The activation energy and room temperature conductivity varied from 0.9 to 0.3 eV and from 10 12 to 10 4 Ohm .cm , respectively, by ranging the boron concentration from 0 to 3 at.%. These ranges of electronic properties are of the same or...

We have developed 0.1-μm gate-length InAlN/GaN high electron-mobility transistors (HEMTs) for millimeterwave (MMW) power applications, particularly at 71–76 and 81–86 GHz bands. The impacts of depth and width of the gate recess groove on electrical performance have been analyzed and compared. Competing passivation technologies, atomic layer deposition (ALD) aluminum oxide (Al2O3) and plasma-enh...

Carbon nanotubes (CNTs) and nanofibres (CNFs) are grown on bulk-micromachined silicon surfaces by thermal and plasma-enhanced chemical vapour deposition (PECVD), with catalyst deposition by electron beam evaporation or from a colloidal solution of cobalt nanoparticles. Growth on the peaked topography of plasma-etched silicon ‘micrograss’ supports, as well as on sidewalls of vertical structures ...

This work focuses on the development of a multiscale computational fluid dynamics (CFD) simulation framework with application to plasma-enhanced chemical vapor deposition of thin film solar cells. A macroscopic, CFD model is proposed which is capable of accurately reproducing plasma chemistry and transport phenomena within a 2D axisymmetric reactor geometry. Additionally, the complex interactio...

Different sizes of Ge nanocrystals embedded in a SiO2 matrix were formed by PECVD, and analyzed by TEM. Size effect of Ge nanocystals was demonstrated by Raman spectroscopy after excluding the thermal effect. OCIS codes: (160.4236) nanomaterial; (160.6000) semiconductor material;

Abstract Cobalt chromium alloys (CoCr) are commonly used as total disc replacement components. However, there concerns about its long-term biological effects. Coating the CoCr with a ceramic could improve implant’s biocompatibility and wear resistance. Silicon nitride (SiNx) coatings have emerged recent alternative to this end. While many evaluated physical vapour deposition (PVD) techniques de...