We employ first principles methods to explore the coupling between electrons and the lattice in amorphous silicon (a-Si). First we compute the adiabatic electronic response to phonon modes in a realistic model of a-Si. Then, we present a simulation of the electron dynamics of localized edge states in a-Si at room temperature by integrating the time dependent Schrödinger equation. We study the c...

We investigate the coupling of an inhomogeneous electron system to phonons. The properties of an electronic system composed of a mixture of microscopic ordered and disordered islands are changed fundamentally by a phonon mode. In high-Tc cuprates, such a phase separation scenario is supported by recent STM and nuclear quadrupole resonance studies. We show that even a weak or moderate electronph...

We present a theoretical study of superconductivity of polarons in the Hubbard-Holstein model. A residual kinematic interaction proportional to the square of the polaron hopping energy between polarons and phonons provides a pairing field for the polarons. We find that superconducting instability in the dwave channel is possible with small transition temperatures which is maximum in the large t...

We develop a theoretical formalism to model the linear spectrum of a quantum dot embedded in a highquality cavity, in the presence of an arbitrary mechanism modifying the homogeneous spectrum of the quantum dot. Within the simple assumption of Lorentzian broadening, we show how the known predictions of cavity quantum electrodynamics are recovered. We then apply our model to the case where the q...

Coherent thermal transport in nanopatterned structures is a topic of considerable interest, but whether it occurs in certain structures remains unclear due to a poor understanding of which phonons conduct heat. Here, we perform fully three-dimensional, frequency-dependent simulations of thermal transport in nanomeshes by solving the Boltzmann transport equation with an efficient Monte Carlo met...

2014 We have investigated the spin-lattice relaxation of localized states in evaporated amorphous silicon films. Temperature and concentration dependences of the relaxation rate have been measured in the temperature range 4.2-290 K. Below 10 K a phonon bottleneck is present. Between 10 and 100 K, a single phonon process predominates. It can be accounted for assuming a significant exchange inter...