Ferroelectric oxides are of continuing interest in a new generation of electronic devices, such as piezoelectric actuators and nonvolatile memory devices. In general, their application involves manipulation of the polarization of the ferroelectric and the polarization depends sensitively on boundaries and interfaces. Here we study the dynamic interaction during polarization switching of domains...

An analysis is presented for transient response of a mode-III interfacial crack propagating between two dissimilar piezoelectric half spaces. The dynamic fracture toughness of a piezoelectric interface is examined, which is a central issue related to the interface strength of multi-layered sensors and ferroelectric thin film devices. For the mode-III crack propagation in piezoelectric materials...

The purpose of this thesis is to investigate piezoelectric and ferroelectric thin film device technologies for application in microwave oscillators. Thin film varactors based on ferroelectric materials are considered. Experimental development of practical varactors based on paraelectric phase BaxSr1−xTiO3, in terms of layout design and model extraction, is presented in the thesis. Experimental ...

This paper details an experimental investigation of the clamping effect associated with thick-film piezoelectric elements printed on a substrate. The clamping effect reduces the measured piezoelectric coefficient, d33, of the film. This reduction is due to the influence of the d31 component in the film when a deformation of the structure occurs, by either the direct or indirect piezoelectric ef...

Zinc oxide [ZnO] thin films are deposited using a radiofrequency magnetron sputtering method under room temperature. Its crystalline quality, surface morphology, and composition purity are characterized by X-ray diffraction [XRD], atomic force microscopy [AFM], field-emission scanning electron microscopy [FE-SEM], and energy-dispersive X-ray spectroscopy [EDS]. XRD pattern of the ZnO thin film ...

A thin film lead zirconate titanate, Pb(Zr,Ti)O3 (PZT), MEMS power generating device is developed. It is designed to resonate at specific frequencies from an external vibrational energy source, thereby creating electrical energy via the piezoelectric effect. Our cantilever device i t 2 f 1 d r ©

This paper describes a high quality thin film piezoelectric aluminium nitride technology developed for applications in bulk acoustic wave resonators and filters. The fabrication of both SMR and FBAR resonators is described, and the main characteristics of these devices are reviewed.

In recent years, the demand for thin film coatings on large area substrates has been rapidly increasing. Coating is some times required to make an object harder, or to provide the surface with particular electrical and optical properties. Hence, research on thin film science has received much attention due to its tremendous applications in modern technology. The importance of coatings and the s...