There are currently great needs to develop low-cost inorganic materials that can efficiently perform solar water splitting as photoelectrolysis of water into hydrogen and oxygen has significant potential to provide clean energy. We investigate the Si/TiO(2) nanowire heterostructures to determine their potential for the photooxidation of water. We observed that highly dense Si/TiO(2) core/shell ...

It is of great importance to construct a stable superhydrophobic surface with low sliding angle (SA) for various applications. We used hydrophobic carbon nanotubes (CNTs) to construct the superhydrophobic hierarchical architecture of CNTs on silicon micropillar array (CNTs/Si-μp), which have a large contact angle of 153° to 155° and an ultralow SA of 3° to 5°. Small water droplets with a volume...

Motivated by solid-state studies on the cleavage force in Si, and the consequent stretching of chemical bonds, we here study bond stretching in the, as yet unsynthesized, free space molecule Si6H6. We address the question as to whether substantial bond stretching (but constrained to uniform scaling on all bonds) can result in a transition from ring current behaviour, characteristic say of benze...

An approach by which single crystal a-GaN can be grown laterally over oxidized AlAs (AlOx) formed on Si substrates is demonstrated. Regular a-Ga2-O3 stripe templates, spatially separated by AlOx , on which subsequent GaN growth is selectively seeded are formed. Since the boundary between the stripe template and AlOx is nominally planar, two pyramidal planes on separated GaN can merge by growing...

This paper addresses the problem of designing drawing algorithms that receive as input a planar graph G, a partitioning of the vertices of G into k different semantic categories V0, · · · , Vk−1, and k disjoint sets S0, · · · , Sk−1 of points in the plane with |Vi| = |Si| (i ∈ {0, · · · , k − 1}). The desired output is a planar drawing such that the vertices of Vi are mapped onto the points of ...

Near-infrared (NIR) solid-state micro/nanolasers are important building blocks for true integration of optoelectronic circuitry. Although significant progress has been made in III-V nanowire lasers with achieving NIR lasing at room temperature, challenges remain including low quantum efficiencies and high Auger losses. Importantly, the obstacles toward integrating one-dimensional nanowires on t...

Selective lateral epitaxial (SLE) semiconductor nanowires (NWs), with their perfect in-plane epitaxial alignment, ability to form lateral complex p-n junctions in situ, and compatibility with planar processing, are a distinctive platform for next-generation device development. However, the incorporation and distribution of impurity dopants in these planar NWs via the vapor-liquid-solid growth m...